APTM50DAM35TG Allicdata Electronics
Allicdata Part #:

APTM50DAM35TG-ND

Manufacturer Part#:

APTM50DAM35TG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 500V 99A SP4
More Detail: N-Channel 500V 99A (Tc) 781W (Tc) Chassis Mount SP...
DataSheet: APTM50DAM35TG datasheetAPTM50DAM35TG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 5mA
Package / Case: SP4
Supplier Device Package: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 781W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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Transistors are ubiquitous components that enable the flow of current from one place to another. The APT50DAM35TG is an enhancement-mode low voltage field-effect transistor (FET) that effectively manages the transfer of current. This versatile device can be used to make a wide range of modern electronics, from computers to cell phones. With a rich assortment of features, the APT50DAM35TG has earned a reputation for being reliable and efficient.

The APT50DAM35TG utilizes a metal–oxide–semiconductor field-effect transistor (MOSFET) that consists of three terminals, the gate, the source, and the drain. The useful design of the device allows it to be used in a variety of conditions and settings, ranging from high-frequency applications like mobile phones and satellites, to low-frequency applications like smart meters. This versatility makes the APT50DAM35TG an ideal choice for a wide range of applications.

The working principle of the APT50DAM35TG is quite simple. By adjusting the gate voltage, one can control the electrical current flowing from the source to the drain. When the voltage applied to the gate is raised, more current is allowed to pass from the source to the drain. On the other hand, when the gate voltage is lowered, less current is allowed to pass. This basic principle is used in various electronics and allows for far more efficient use of current, with less power consumption.

In summary, the APT50DAM35TG is a MOSFET that can be used in a variety of settings, from high frequency to low frequency, and allows for far more efficient use of current. With its three-terminal design and simple working principle, the APT50DAM35TG has earned a reputation for being reliable and efficient. This device can be used to make a wide range of modern electronics, from computers to cell phones, and is an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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