APTM120SK56T1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

APTM120SK56T1G develops in the past 3 years and has become one of the most popular N-channel enhancement-mode MOSFETs of the APTM series. It is a single-drain transistor, which makes it suitable for both RF and power applications. The APTM120SK56T1G is mainly used in low-power on/off switching application, voltage control and signal controlling application. It is manufactured in International Rectifier™s stringent 35 V to 175 V process, which requires superior punch-through stability when compared with the conventional N-channel process.

Application field

APTM120SK56T1G can be used as a switch micro-electronic circuit for multiple applications. It is suitable for low-power, low-voltage on/off switching applications. It can be used in electronic power applications, voltage control and signal controlling applications in electronic components such as transistors, diodes and relays. APTM120SK56T1G can be used for low-voltage and high-current power switch driver applications, such as switching power supplies or DC-AC inverters. For switching applications, the on/off state of APTM120SK56T1G can be controlled by the gate voltage.  

Working principle

APTM120SK56T1G is an enhancement-mode power MOSFET, which behaves as an insulated gate field effect transistor (IGFET). The key difference between an IGFTF and a common field-effect transistor (FET) is that an IGFET has a gate oxide layer (insulating layer), which separates the gate terminal from the channel. By applying the gate voltage the electrons are repelled from the channel and the gate junction of the MOSFET acts as a capacitor, resulting in the gate’s high-impedance connection. This is how the device works as a switch.

APTM120SK56T1G also has built-in internal protection against drain-to-gate or source-to-gate overvoltage failures. It has an internal body diode, which ensures that unwanted current drain is not transferred to the gate. In addition, it also has a low-capacitance circuit, which helps to minimize power supply noise. The APTM120SK56T1G offers excellent Linear Transfer Characteristic, which makes it much better as compared to other MOSFETs when it comes to switching applications. This is due to the two conditions, which are required for low-loss operation of the MOSFET: good drain-to-source impedance and good resistance-to-drive current.

In summary, APTM120SK56T1G is an advanced N-channel enhancement-mode MOSFET, which makes it ideal for low-power and operation voltage switching applications. It has a built-in internal protection layer, which prevents overvoltage failures, and has a low-capacitance circuit, which helps to minimize power supply noise. It offers excellent Linear Transfer Characteristic, which makes it much better as compared to other MOSFETs when it comes to switching applications.

The specific data is subject to PDF, and the above content is for reference