Allicdata Part #: | APTM20DHM10G-ND |
Manufacturer Part#: |
APTM20DHM10G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 2N-CH 200V 175A SP6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 200V ... |
DataSheet: | APTM20DHM10G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 175A |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 87.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 224nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 13700pF @ 25V |
Power - Max: | 694W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6 |
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The APTM20DHM10G is a high-voltage N-channel power-MOSFD array (power module) used in power switching applications. The design of the module includes a series of N-channel MOSFETs (field-effect transistors) arranged in a bridge or half-bridge array. The module is designed to provide high efficiency and low power losses, while providing the necessary control signals and connections.
The power module contains 4 gate MOSFETs in a 2-by-2 single-stage configuration. Each MOSFET is connected internally in a push-pull configuration, allowing the module to switch current in a much lower switching time than a single-MOSFET equivalent. The power module also contains a Power Management Unit (PMU), which is designed to provide a way to control the current through the power module and to monitor the temperatures of the individual MOSFETs.
The power module is designed to be used in a variety of applications, such as dc-dc conversion, motor control, and solar panel control. The power module has an operating frequency range of up to 150 KHz and can operate at high voltages of up to 600 V. The module contains integrated voltage termination for optimal performance. The gate drive circuitry of the power module is also designed to reduce gate resistance and provide good noise immunity. Additionally, the power module is able to provide fast switching times of up to 50 ns between transitions.
The power module is designed to be compatible with a wide range of power supply and control systems. It has a power input capability of up to 60 A and can be controlled by an Analog or PWM signal. The module also contains 2-MOS input protection and over-current protection. Additionally, it contains an integral thermal protection and a reverse current protection.
The power module can be used in applications requiring high efficiency and power loss control. Additionally, the power module can be used in applications requiring fast switching times and high voltage operation. The module’s ability to quickly switch current makes it well suited for applications such as those involving motor control, solar panel control, and dc-dc conversion. Additionally, it contains several safety features which make it suitable for reliable operation in tough environments.
The specific data is subject to PDF, and the above content is for reference
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