APTM20DHM16TG

Series:	--
Packaging:	Bulk
Part Status:	Discontinued at Digi-Key
FET Type:	2 N-Channel (Dual) Asymmetrical
FET Feature:	Standard
Drain to Source Voltage (Vdss):	200V
Current - Continuous Drain (Id) @ 25°C:	104A
Rds On (Max) @ Id, Vgs:	19 mOhm @ 52A, 10V
Vgs(th) (Max) @ Id:	5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:	140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	7220pF @ 25V
Power - Max:	390W
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SP4
Supplier Device Package:	SP4

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Introduction

The APTM20DHM16TG is a monolithic dual metal oxide semiconductor field-effect transistor (MOSFET) array device. The device is designed for use in high voltage power distribution and inverter applications. The device is constructed with a pair of hot-swap circuits, each of which contains two independent MOSFETs.

Application Field and Working Principle

The APTM20DHM16TG has many uses in industrial, commercial and residential applications. It can be used for power supply and battery monitoring, high voltage protection systems, motor control, grid-tied inverters, power supply design, and other applications that require reliable, high voltage MOSFETs.The APTM20DHM16TG works by using two MOSFETs in the same device. Each MOSFET is connected in a source-drain circuit and acts as a switch, allowing current to flow in one direction only when the gate of the MOSFET is activated. The two transistors can be arranged in parallel or in series depending on the desired power output.The device also has short circuit protection, which helps protect the MOSFETs from shorts and overcurrent damage. It also has an integrated protection diode for overvoltage protection when used with high voltage applications.

Benefits of Using APTM20DHM16TG

The APTM20DHM16TG is a reliable, efficient, and cost-effective solution for high voltage applications. It has an integrated protection diode, is capable of handling high voltages, and has short circuit protection. The dual MOSFET configuration provides redundancy, which reduces the risk of a failure in the system.The device has a high power density, meaning it can deliver more power per unit of weight than other MOSFETs. This makes it ideal for a wide range of applications, from motor control to power supply design.Finally, the device is highly reliable, with no single-point failure. This ensures that, should one MOSFET fail, the other will take its place and ensure the system remains operational.

Conclusion

The APTM20DHM16TG is a highly reliable and efficient MOSFET array device designed for high voltage power distribution and inverter applications. The device features redundancy and integrated protection diodes for overvoltage protection. It also has a high power density and is capable of handling high voltages, making it suitable for a wide range of applications.

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