Allicdata Part #: | APTM50AM19STG-ND |
Manufacturer Part#: |
APTM50AM19STG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 2N-CH 500V 170A SP4 |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 500V 170A 1... |
DataSheet: | APTM50AM19STG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 170A |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 85A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: | 492nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 22400pF @ 25V |
Power - Max: | 1250W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
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The APTM50AM19STG is an array of FETs or field-effect transistors, specifically MOSFETs, incorporated in an integrated circuit. It is an example of advanced semiconductor packaging designed for optimal power efficiency in compact module applications. This type of FET array is also known as a System-on-Chip (SoC) device.
MOSFETs are specialized transistors which are widely used in many types of electronic circuits, including analog and digital design, power amplifiers, and other applications. The MOSFET array consists of an integrated array of transistors which is composed of several elements, typically in the hundreds. The array is connected to a common control circuit which is responsible for switching the transistors on and off according to the signals received from the control circuit.
The APTM50AM19STG is relatively compact and produces very low levels of power consumption, making it ideal for power consumption sensitive applications. It is designed for use in applications such as processor-based and communications systems, automotive systems, and many others. It has a high efficiency power conversion rate of up to 99%.
The APTM50AM19STG is designed to work with two types of gate drive signals: gate control active low (GCAL) and gate control active high (GCAH). Depending on the application, either gate drive signal may be used to switch the transistors on or off. When the gate drive signal is high, transistors are switched to their off-state, allowing current to flow through the transistor channel and efficiently transfer power to the load. Conversely, when the gate drive signal is low, the transistor is switched to its on-state, blocking current flow, and transistors are switched to their off-state, reducing power consumption.
The APTM50AM19STG is designed with a powerful, efficient, and reliable logic circuit. This logic circuit is capable of recognizing and executing complex commands from the gate drive signal. It also provides various protection features such as thermal shutdown, ensuring that the device will not be damaged due to excessive power dissipation. The logic circuit is integrated with a variety of features that enable efficient and reliable operation, such as an adjustable short pulse protection, an adjustable surge protection, a load shade protection, and an active gate drive current limiting function.
The APTM50AM19STG is a versatile FET array which is suitable for use in a variety of applications, including communications and processor-based systems, automotive systems, and many others. It is an ideal device for applications requiring an efficient, reliable, and cost-effective solution for managing power consumption.
The specific data is subject to PDF, and the above content is for reference
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