APTM50DSK10T3G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The APTM50DSK10T3G is an array of 23 field-effect transistors (FETs), placed in a 3-by-8 grid. It is a product from Advanced Semiconductor that is designed to be used in a variety of applications, including radio-frequency (RF) power amplifiers, digital switch applications, and high-frequency amplifiers. This array of FETs is ideal for applications requiring very low noise performance and wide gain flatness over a broad range of frequencies.

The APTM50DSK10T3G array consists of three parallel rows of transistors, with each row containing eight FETs. Each FET is composed of two N-channel MOSFETs that are preceded by two integrated gate CMOS switches. The FETs in this array are known as “super junction” MOSFETs, and they utilize an advanced process that allows for a higher breakdown voltage due to the combined action of two separate N-channel MOSFETs in series.

The APTM50DSK10T3G array operates as a switching device and is typically used in circuits controlled by a microprocessor. Its switches are designed to be used with a 3.3 volts or higher power supply voltage and can operate up to 50 MHz.The switches have an integrated level shifting and switch driver on board which allows the switch to be controlled from a low voltage (3.3 volts) logic control port.

The APTM50DSK10T3G array is ideal for digital applications as it has very low static and dynamic power dissipation when compared with other FETs. It also has an extremely wide gain flatness range, which enables it to be used in a wide range of applications, ranging from high-frequency, low-power amplifiers to high power-amplifiers with a large number of transistors. The array operates using very low supply voltage (3.3 volts).

Overall, the APTM50DSK10T3G array is a powerful and versatile switching device that can be used in a wide range of applications. Its ability to operate at high frequencies, combined with low static and dynamic power dissipation, makes it ideal for RF and digital switch applications. The array\'s wide gain flatness range also makes it suitable for high frequency amplifiers.

The specific data is subject to PDF, and the above content is for reference