APTMC120AM20CT1AG

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The APTMC120AM20CT1AG is a field effect transistor array consisting of two high voltage N-Channel Enhancement mode MOSFET. This device is housed in a Surface-Mounted Device (SMD) package and is suitable for automotive and industrial applications.

A field effect transistor (FET) is a type of transistor that is constructed with its collector and emitter terminals embedded in a wide, flat array of small transistors or diodes, which acts as a conducting channel. FETs act as digital switches, which can open and close the flow of current depending on the voltage applied to their gate terminal. This enables them to control the flow of power by switching the current on and off. When a voltage is applied to the gate terminal, it causes the gate to open and allows current to flow through the conducting channel. When the voltage is removed, the gate closes, cutting off the current flow.

The APTMC120AM20CT1AG is an enhancement mode MOSFET, which is based on a metal-oxide-semiconductor (MOS) design. The gate and channel are connected together in an open configuration, allowing charges to pass between them. Unlike other FETs, this device is capable of controlling the amount of current flowing through it in both directions, making it highly versatile. Additionally, the gate terminal is isolated from the channel, making the device immune to short-term power surges and allowing it to operate more efficiently under high temperatures.

The APTMC120AM20CT1AG is designed to provide performance, robustness and long term reliability in various applications, such as automotive and industrial applications. It is especially suitable for high frequency switching applications due to its fast switching time and low ON resistance. Furthermore, its high voltage tolerance allows it to be used in applications such as power supplies, power converters and high voltage LED driving.

The chip consists of two N-Channel enhancement-mode MOSFETs in a dual in-line package. The FETs have a breakdown voltage of 120V and are rated for operation at up to 20A. The device also features a low RDSon (resistance between drain and source) of 13mΩ, allowing it to operate efficiently and reduce power losses in applications such as high power DC/DC converters.

In summary, the APTMC120AM20CT1AG is a field effect transistor array consisting of two N-Channel Enhancement Mode MOSFETs housed in an SMD package. It is suitable for automotive, industrial and other applications requiring high voltage switching with fast switching time and low ON resistance. Its robust design provides long-term reliability and high temperature performance, while its low RDSon reduces power losses in high power DC/DC converters.

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