Allicdata Part #: | APTMC120TAM17CTPAG-ND |
Manufacturer Part#: |
APTMC120TAM17CTPAG |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 6N-CH 1200V 147A SP6P |
More Detail: | Mosfet Array 6 N-Channel (3-Phase Bridge) 1200V (1... |
DataSheet: | APTMC120TAM17CTPAG Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 0.63000 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | 6 N-Channel (3-Phase Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 147A |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 100A, 20V |
Vgs(th) (Max) @ Id: | 2.4V @ 20mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs: | 322nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5600pF @ 1000V |
Power - Max: | 625W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6-P |
Description
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The APTMC120TAM17CTPAG is a type of Field Effect Transistor (FET) that is equipped with an integrated array of 16 FET cells and is organized in a 2x8 configuration. This particular type of FET array is commonly used in high-performance and power electronics applications.The APTMC120TAM17CTPAG is an optimized solution for use as a power switch and controller. This is due to its low on-resistance and high current rating, as well as its high-voltage and temperature ratings. This device also has a very low output capacitance which helps to reduce switching losses and improve efficiency in high frequency and high-power applications.The physical package of the APTMC120TAM17CTPAG is small. The entire device is housed in a single chip that measures only 1.27 mm x 1.27mm. This is small enough to allow for easy integration into high-density circuit boards and other embedded systems.The APTMC120TAM17CTPAG is an N-channel power FET with a low gate-source threshold voltage. This low voltage level means that the device can be easily turned on and off using a low-voltage power source. This is also beneficial in designs where low-voltage control signals are required.The working principle of the APTMC120TAM17CTPAG is based on the principle of field effect transistor (FET) cells. FET cells are semiconductor devices that consist of two layers of semiconductor material separated by an insulating barrier. One layer is called the drain, and the other is called the source. The source is charged with a positive charge, while the drain is charged with a negative charge.When a voltage is applied to the gate, which is the third terminal of the FET, it pulls the electrons from the source towards the drain, reducing the resistance between the two. This causes an electric current to flow through the circuit, allowing the device to act as a switch. By changing the voltage level of the gate, the on/off state of the switch can be controlled.The APTMC120TAM17CTPAG can be used in a variety of applications, including high-performance and power electronics. It is ideal for use as a power switch and controller, due to its low on-resistance and high current ratings, as well as its high-voltage and temperature ratings. This type of FET array is capable of performing high-speed switching operations, making it an effective choice for use in high-frequency and high-power systems. Additionally, its small form factor and low gate-source threshold voltage make it an excellent choice for system designs that require low-voltage control signals.The specific data is subject to PDF, and the above content is for reference
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