APTMC120TAM34CT3AG

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APTMC120TAM34CT3AG is an advanced power transistor developed by Advanced Power Technology, Inc. It is an N-channel enhancement mode MOSFET array containing two independent, internally matched N-channel MOSFETs, specifically designed for application in low-voltage, high-current power supplies. This device can be used in a variety of applications in circuits with high-drain and low-drain conditions, such as DC/DC converters, power inverters, and many others.

The APTMC120TAM34CT3AG has a source-drain breakdown voltage of up to 120V, as well as a maximum rating of 34A, making it suitable for use in a wide range of applications. It also has a low RDS(on) of 0.4 ohms, making it suitable for use in applications with high-current, low-voltage conditions. The device is constructed of high-performance silicon, providing superior performance and reliability. This transistor has a low gate bias of 1V and a maximum gate-source voltage of 12V.

In terms of its working principle, the APTMC120TAM34CT3AG uses the principles of field-effect transistors (FETs). FETs rely on a voltage applied across two electrodes, the drain and the source, and a controllable gate terminal, to control the amount of current flow between the two terminals. The device is constructed of two independent gates, which allows each gate to be independently controlled. This allows the user to apply a specific output for each gate, allowing for more control over the output. Additionally, each gate has a certain capacitance associated with it, which helps to reduce the total output noise of the device.

The APTMC120TAM34CT3AG is an example of an advanced MOSFET array, which combines multiple MOSFETs in a single package, providing improved performance and convenience for designers. This device can be used in a variety of applications, including DC/DC converters, power controllers, buck converters, and more. With its dual gate design and high-output capability, it can be used in circuits with both high- and low-drain conditions. Additionally, the device is constructed of high-performance silicon, providing superior performance and reliability.

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