![APTMC170AM30CT1AG Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | APTMC170AM30CT1AG-ND |
Manufacturer Part#: |
APTMC170AM30CT1AG |
Price: | $ 625.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 2N-CH 1700V 106A SP1 |
More Detail: | Mosfet Array 2 N Channel (Phase Leg) 1700V (1.7kV)... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 568.25300 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | 2 N Channel (Phase Leg) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1700V (1.7kV) |
Current - Continuous Drain (Id) @ 25°C: | 106A |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 100A, 20V |
Vgs(th) (Max) @ Id: | 2.3V @ 5mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs: | 380nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6160pF @ 1000V |
Power - Max: | 700W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP1 |
Supplier Device Package: | SP1 |
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The APTMC170AM30CT1AG is a high performance vertical trench MOSFET array device. It offers superior performance and is intended for power applications such as power factor correction and power management. The device is built on a vertical trench MOSFET technology and is comprised of two independent MOSFETs with each having two pillars (or channels). It has a maximum drain-source breakdown voltage (BVDS) of 170V, an on-state resistance (Rdson) of 30 mOhm, and a continuous drain current (ID) of 44 A. The device has a low gate charge (Qg) which minimizes switching losses and makes the device well suited for high-speed switching.
The APTMC170AM30CT1AG is used in a wide variety of applications, ranging from power factor correction and power management for automotive, computing, and communications applications, to power electronic applications such as motor control and power regulation. The device is designed to be used in a wide range of application fields, including automotive, industrial, computing, communication, and consumer electronics. The APTMC170AM30CT1AG is also used in instrumentation and medical applications.
The working principle of the APTMC170AM30CT1AG is based on the principles of the MOSFET technology. The MOSFET enables the device to deliver excellent performance when compared to other power switches. When a voltage is applied to the gate of the MOSFET, a channel of electrons is formed between the source and the drain, allowing current to flow from the source to the drain through the channel. When the gate voltage is increased, the current flowing through the channel is increased, and the device is said to be in the ON state. When the gate voltage is decreased, the current flow through the channel is reduced, and the device is said to be in the OFF state.
The APTMC170AM30CT1AG is a highly durable device, since it is manufactured using advanced lithography techniques. This ensures that the device is able to withstand high currents and high temperatures. It also offers good passivation, which improves the product\'s stability and reliability. The APTMC170AM30CT1AG is also highly efficient, since it is able to deliver high peak currents at frequencies that make it ideal for high-speed applications. Furthermore, it is able to dissipate heat quickly, minimizing the power losses associated with it.
Overall, the APTMC170AM30CT1AG is a versatile, high performance MOSFET array device that is suitable for a wide variety of applications. It offers good performance and reliability, and is suitable for use in automotive, industrial, computing, communication, and consumer electronic applications. It is also highly efficient and can be used for high-speed switching applications.
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