APTML202UM18R010T3AG

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	200V
Current - Continuous Drain (Id) @ 25°C:	109A (Tc)
Rds On (Max) @ Id, Vgs:	19 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:	--
Input Capacitance (Ciss) (Max) @ Vds:	9880pF @ 25V
Power - Max:	480W
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SP3
Supplier Device Package:	SP3

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APTML202UM18R010T3AG Application Field and Working Principle
APTML202UM18R010T3AG is a device used in Mosfet array products. It is believed to have very low on-state resistance and high current handling capability. It is also known for its low-noise, low-power consumption, and high-reliability. This type of device has many benefits, including cost effectiveness and in most applications it has the capability of providing stable and reliable operation.
Uses
APTML202UM18R010T3AG is used in a variety of applications that require low on-state resistance, low-noise, and low-power consumption. Common applications include audio amplification, motor speed control, and power supply control. The device also has some industrial uses such as power supply applications in electric vehicles and machines. In addition to these applications, the device functions as a switch in cell phones, electrical control systems, and can be used for gate control applications.
Working Principle
APTML202UM18R010T3AG utilizes a field-effect transistor (FET) array, which is a type of transistor that relies on electrical fields to control its output. Each single FET consists of source, gate, and drain terminals, and an internal gate oxide layer that helps to control the transistor\'s current flow. Each FET in an FET array works as an individual component, allowing complex purposes to be developed using these isolated transistor elements. In the array, the source and drain terminals are connected internally while the gates of all individual FETs are connected externally, so they are all controlled by the same voltage input.
When operating APTML202UM18R010T3AG, a voltage is provided to the gate terminal to control the flow of current between the source and drain terminals. The amount of current that can be allowed to pass through the FET is determined by the gate voltage. A higher gate voltage will produce a larger current, while a lower voltage will produce a smaller current. In this manner, the device is able to control the flow of current with very little power consumption and in a very reliable manner. It is also extremely fast and efficient, making it an ideal device for many applications, particularly in higher frequencies.
Conclusion
APTML202UM18R010T3AG is a device used in Mosfet array products, which provides many benefits due to the low on-state resistance, low-noise, low-power consumption and high reliability. The device utilizes a field-effect transistor (FET) array, which controls the flow of electrical current through the FETs by a voltage signal applied to the gate terminal. This provides a reliable and stable operation, with fast switching and very little power consumption. It is used in many applications such as audio amplification, motor speed control and power supply control, making it a great device for many scenarios.

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