BSC018NE2LSIATMA1

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BSC018NE2LSIATMA1 is a field effect transistor (FET) designed specifically for high power and high temperature applications. It is a N-channel enhancement mode transistor that is capable of operating at high switching speeds. It is mainly used for applications such as automotive and industrial motor control, power supplies, motor drives, DC-DC converters, and communications receivers.

The BSC018NE2LSIATMA1 is a silicon-based transistor (MOSFET) with a drain current rating of up to 18A/23A, a drain-source voltage rating of up to 100V, and a power dissipation of 420W/660W. Its total gate charge is 3.2nC, gate-source voltage rating of 18V, and body avalanche energy is 636mJ. It is available in a convenient surface-mount package and is RoHS compliant.

This transistor is formed by two electrodes, the source and the drain, placed on the silicon substrate. The current flow through the drain is controlled by an additional electrode known as the gate electrode. The gate electrode can be positively charged or negatively charged, which changes the conductivity of the drain. The terminology used to describe FETs is gate-source voltage (Vgs), gate charge (Qg), and drain-source voltage (Vds).

When a voltage is applied to the gate electrode, it creates an electric field in the channel between the source and the drain. The current flow through the channel that is controlled is called the channel conductivity and is determined by the gate voltage. In enhancement mode, the current flow between the source and the drain increases as the gate voltage increases. The BSC018NE2LSIATMA1 operates in an enhancement-mode.

The figure below shows the general circuit diagram of an n-channel enhancement mode FET. When a positive voltage is applied to the gate, the electrons in the channel region become negatively charged and will repel other electrons. This creates an electric field that changes the conductivity of the channel between the source and the drain. When a negative voltage is applied to the gate, the electric field is reversed and the current will be diverted away from the drain.

In the case of the BSC018NE2LSIATMA1, the high power rating and high temperature ratings make it well-suited for applications such as motor control, power supplies, motor drives, DC-DC converters, and communications receivers. In these applications, not only do the FETs have to be capable of operating quickly, they also have to be able to withstand high temperatures. This is because in these applications, the FETs have to endure extreme environmental conditions, such as high voltage transients and unexpected high temperatures.

The BSC018NE2LSIATMA1 is a popular choice for these applications due to its high power and high temperature ratings. It is also one of the most robust FETs available, which helps to ensure it has a long life and can be used in difficult operating conditions. The device is RoHS compliant and can be purchased from most major manufacturers. For Further information about the specifications and applications of the BSC018NE2LSIATMA1, please consult the data sheet.

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