BSC065N06LS5ATMA1 Allicdata Electronics
Allicdata Part #:

BSC065N06LS5ATMA1-ND

Manufacturer Part#:

BSC065N06LS5ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CHANNEL 60V 64A 8TDSON
More Detail: N-Channel 60V 64A (Tc) 46W (Tc) Surface Mount PG-T...
DataSheet: BSC065N06LS5ATMA1 datasheetBSC065N06LS5ATMA1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 46W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 30V
Vgs (Max): ±20V
Series: OptiMOS™
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 32A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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BSC065N06LS5ATMA1 is one of the single field-effect transistors (FETs) specifically designed for low voltage applications. This FET utilizes a enhancement-type MOSFET (metal-oxide semiconductor field-effect transistor) as its structure and function, making it ideal for applications with a low, constant drain current to channel. It is typically used in power, automotive and audio output stages, meaning the device can be operated with a low input current and achieve a high output current.

The BSC065N06LS5ATMA1 FET is composed of two n-channel areas, a p-channel area, and a standard gate. During operation, current flows through the n-channel regions, where its voltage remains constant. The gate voltage is used to regulate the drain current, meaning the flow rate of current will increase as the gate voltage increases. Worded another way, the FET works as a variable resistor because the resistance of the channel is dependent on the voltage applied to the gate.

The BSC065N06LS5ATMA1 is designed for use in low voltage, low frequency applications, ranging from 0.6 to 1V, with 3V gate voltage. It has a low on-state resistance and high peak current capability, which makes it ideal for use in applications like power converters and motor control systems. In addition, the device is also capable of withstanding voltage spikes of up to 600V, and is protected against thermal overload for improved reliability. The BSC065N06LS5ATMA1 also features a low static threshold voltage and high on-state conductor resistance.

The BSC065N06LS5ATMA1 has a wide variety of applications. One of the most common uses of this FET is to control high-power appliances. The device is used in electric motors and other high-power pulse motors to control the speed, direction and voltage of the motor. Additionally, the FET may be used for Voltage Regulation Modules (VRMs), which are used in computer motherboards to control the voltage supplied to the CPU. It is also used in audio output stages, such as in guitar amplifiers, to adjust the treble and bass tones. Finally, these FETs may be used as a switch in automotive power systems, such as to control headlights, wipers, and other vehicle components.

The BSC065N06LS5ATMA1 is a single field-effect transistor (FET) specifically designed for low voltage applications. It has an enhancement-type MOSFET design and is specifically tailored to provide a constant drain current when used in low voltage applications. The device is capable of high peak current levels and can withstand voltage spikes of up to 600V. The FET has a wide range of applications, including electric motor control, voltage regulation, audio output stages, and automotive power systems. When used properly, the BSC065N06LS5ATMA1 FET offers high reliability and increased performance in low voltage applications.

The specific data is subject to PDF, and the above content is for reference

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