BSC077N12NS3GATMA1 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 110µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PG-TDSON-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	139W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5700pF @ 60V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	88nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	7.7 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	13.4A (Ta), 98A (Tc)
Drain to Source Voltage (Vdss):	120V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

BSC077N12NS3GATMA1 is an insulated-gate bipolar transistor (IGBT) specifically designed to meet the requirements of high-frequency switching applications. It is a high-power semiconductor device that consists of a p-n-p-n junction sensitive to voltage and capable of controlling the current flow between its source and drain. This device is suitable for a wide range of industrial, military, and automotive applications, where its features provide outstanding benefits compared to other switching devices.

Application Field

BSC077N12NS3GATMA1 is suitable for use in high-frequency switching applications, such as motor drivers and power converters, allowing for higher efficiency and reduced conduction losses. This device can be used in a wide variety of electronic systems, ranging from household and mobile electronic devices, to industrial, automotive, aerospace, and military systems. Its superior performance, versatility, and reliability make it a popular choice for these applications.

Working Principle

BSC077N12NS3GATMA1 works by controlling the current flow between its source and drain terminals. This control is affected by the voltage applied to the gate terminal. When a small gate-to-source voltage (VGS) is applied, a channel is created in the p-n-p-n junction, and the drain current (in amperes) is determined by the source-to-drain voltage. This can be further controlled via the drain-to-source voltage (VDS) applied, allowing the current flow to be precisely adjusted. The device also features a low forward voltage drop (VF) which ensures low conduction losses and increased efficiency. In addition, BSC077N12NS3GATMA1 supports a wide operating temperature range, up to 175 degrees Celsius, and it offers superior ruggedness and reliability.

Conclusion

BSC077N12NS3GATMA1 is a high-performance, highly reliable, and versatile insulated-gate bipolar transistor that is suitable for high-frequency switching applications. This device is capable of precisely controlling the current flow between its source and drain terminals, and it features a low forward voltage drop for increased efficiency and conduction losses reduction. It is suitable for a variety of industrial, military, and automotive applications, and it has excellent performance and ruggedness.

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