Allicdata Part #: | BSC024N025SG-ND |
Manufacturer Part#: |
BSC024N025S G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 100A TDSON-8 |
More Detail: | N-Channel 25V 27A (Ta), 100A (Tc) 2.8W (Ta), 89W (... |
DataSheet: | BSC024N025S G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6530pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TDSON-8 |
Package / Case: | 8-PowerTDFN |
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The BSCCO4N05S2NOO2 series is a type of mosfet, more specifically a single MOSFET. For electronic design, this type of mosfet is an excellent tool for switching, amplifying and regulating current. This article will focus on the characteristics and applications of BSCCO4N05S2NOO2, as well as its working principle.
Characteristics
The BSCCO4N05S2NOO2 series is a type of high-performance, single-gate mosfet that has a wide range of applications, ranging from low-frequency to high-frequency applications. The BSCCO4N05S2NOO2 series has a very low on-resistance, a high breakdown voltage, and a low gate charge, making it a suitable choice for high power electronics. The series also has a very low gate threshold voltage, making it suitable for low frequency applications. The series is also highly resistant to latch-up, making it ideal for high speed applications.
Applications
The BSCCO4N05S2NOO2 series is used in a variety of applications, including motor control, power supply and motor drivers. This mosfet can be used as a switching element in power electronics, as a part of a power switch circuit. It can also be used as an amplifying device, as it has a very low input capacitance. In addition, it can be used as a current regulator, as it offers excellent regulation characteristics. Furthermore, it can also be used for high speed logic applications, as it has a very low gate threshold voltage.
Working Principle
The BSCCO4N05S2NOO2 MOSFET operates on the principle of the MOSFET. This means that it operates by using a metal-oxide-semiconductor field-effect transistor (MOSFET). This type of transistor is composed of two semiconductor layers, an N-type layer and a P-type layer. The N-type layer is connected to the source terminal, while the P-type layer is connected to the gate terminal. When a voltage is applied to the gate terminal, charge will be transferred from the source to the drain, which results in a current flow between the two terminals. At the same time, a depletion barrier is created between the source and the drain, which restricts the amount of current flow.
Conclusion
The BSCCO4N05S2NOO2 series of mosfets is a type of high-performance, single-gate mosfet that has a wide range of applications. It is suitable for low-frequency to high-frequency applications, and it has features such as a low on-resistance, a high breakdown voltage, and a low gate charge. The BSCCO4N05S2NOO2 series operates on the principle of the MOSFET, which means it is composed of two semiconductor layers, an N-type layer and a P-type layer. It is used for motor control, power supply and motor drivers, as well as for switching, amplifying and regulating current.
The specific data is subject to PDF, and the above content is for reference
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