BSC080N03LSGATMA1

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PG-TDSON-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 35W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1700pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	21nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	8 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	14A (Ta), 53A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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BSC080N03LSGATMA1 Application Field and Working Principle

BSC080N03LSGATMA1 is one of the latest addition to the STFET family of high performance power Field Effect Transistors (FETs). This device is based on the latest Trench Power MOSFET semiconductor technology, offering extremely low on-state resistance as well as a low gate charge for excellent switching performance. The device also has very low gate threshold voltage and drain-source breakdown voltage with excellent dv/dt capability. It is suitable for automotive, industrial, telecom and computing applications.

Field Effect Transistors (FETs)

FETs are the basic building block of most integrated circuits and are widely used in the manufacture of RF amplifiers, switches and analog circuits. FETs are designed to provide electrical signals by controlling current flow through a transistor-based device. They are capable of amplifying signals, providing voltage regulation, and allowing switching between different audio or video signals. These transistors have three terminal pins, each connected to a source, gate and body. The gate provides the control voltage that is used to dictate the amount of current that passes through the device.The most common types of FETs are metal-oxide-semiconductor (MOS) FETs and junction FETs (JFETs). MOS FETs use a layer of metal oxide to create an insulated gate region and control the charge carriers, whereas JFETs rely on the physical barriers between two junctions of P-type and N-type materials. MOSFETs are commonly used in electronic circuits because of their low current needs, low switching losses, rapid switching speed and low voltage drop.

STFET Trench Power MOSFET

The STFET family of Trench Power MOSFETs is designed to provide reliable power and performance in a variety of automotive, industrial, telecom and computing applications. These power MOSFETs have low on-state resistance and gate charge which make them well suited to switching, RF and analog applications. The STFET Trench Power MOSFETs provide excellent dv/dt capability and low gate threshold voltage, making them ideal for use in applications that need robust control of the power switching.The gate control the channel of the device and thus the charge carriers responsible for the conduction of current. This is why the gate-to-source resistance is important in order to ensure that there is sufficient control of the current. The gate-to-source resistance can be different dependent upon device and is usually denoted in the datasheet.

BSC080N03LSGATMA1

The BSC080N03LSGATMA1 is one of the latest additions to the STFET family. This device has the following maximum ratings: drain-source voltage at 500V, gate-source voltage at 20V, total-source current at 32A, on-state resistance at 0.045ohm and gate-source voltage at 2.1V. This device also provides a low gate charge for excellent switching performance and excellent dv/dt capability.The BSC080N03LSGATMA1 can be used for a variety of automotive, industrial, telecom and computing applications. It is ideal for use for power switching and RF applications due to its low on-state resistance, low gate charge and excellent dv/dt capability. Furthermore, its low gate threshold voltage allows for precise control of the current.To summarize, the BSC080N03LSGATMA1 is an advanced power MOSFET device that offers low on-state resistance, a low gate charge and excellent dv/dt capability. It is suitable for a variety of automotive, industrial, telecom and computing applications, making it an ideal choice for power switching and RF applications.

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