BSC097N06NSTATMA1

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The BSC097N06NSTATMA1 is a high-voltage MOSFET that is specifically designed for portable applications, such as power supplies, load switches, and other battery applications. It is characterized by a low on-state resistance and fast switching. This MOSFET is highly reliable and low-cost, making it an ideal choice for in many applications.

The BSC097N06NSTATMA1 has an extremely low on-state resistance – just 5 milliohms – thanks to its advanced silicon nitride technology. This allows the MOSFET to handle higher voltages, greater current, and switch quickly. The device is also very robust, offering more than one million hours of MTBF (Mean Time Between Failures).

The BSC097N06NSTATMA1 is optimized for use in low-voltage systems, such as millivolt or small Li-ion battery-powered devices. It is capable of withstanding a breakdown voltage of 10V and a drain-source breakdown voltage of 20V. It also has a gate-source voltage of -4V to +8V and a maximum drain-source on-state voltage of 12V. The device also has an on-state current rating of 6.0A, making it suitable for most portable applications.

The MOSFET can be used for various applications, including power supply and load switches, low-dropout regulators, and pulse-width modulation circuits. In addition, the device is fully compatible with the IEC332-8 standard and is UL-certified. The on-state resistance is also low enough to be used in high-voltage DC-DC converters.

The main working principle behind the BSC097N06NSTATMA1 is the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). A MOSFET is a type of transistor that uses an electric field to control the flow of current. A MOSFET consists of a channel of semiconductor material between two gate electrodes. When a voltage is applied to the gate electrodes, it creates an electric field, which then changes the conductivity of the channel.

The BSC097N06NSTATMA1 is able to control the flow of current because of its gate electrode’s ability to change the resistance of the channel depending on the applied voltage. This is done by controlling the electric field in the MOSFET channel. When the voltage applied is higher than the threshold voltage, the electric field increases and the resistance of the channel decreases. This allows for the fast switching desired in applications like power supplies and load switches.

The BSC097N06NSTATMA1 is a great device for applications needing both high-efficiency and fast switching. Its robustness and low on-state resistance make it ideal for portable applications, and its IEC332-8 and UL certification make it a safe and reliable device. The device’s simple MOSFET working principle allows it to quickly and reliably control the flow of current in many applications.

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