Allicdata Part #: | BSC014N03LSGATMA1TR-ND |
Manufacturer Part#: |
BSC014N03LSGATMA1 |
Price: | $ 0.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 100A TDSON-8 |
More Detail: | N-Channel 30V 34A (Ta), 100A (Tc) 2.5W (Ta), 139W ... |
DataSheet: | BSC014N03LSGATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.45173 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 1.4 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 131nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10000pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 139W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TDSON-8 |
Package / Case: | 8-PowerTDFN |
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The BSC014N03LSGATMA1 is a highly integrated, low-voltage, single power MOSFET. It is designed for use in portable and low-voltage, high current applications such as DC-DC and switching power supplies, automotive power supply systems, and industrial control and instrumentation systems. It is the ideal choice for portable, low-voltage applications where the highest efficiency, long run-time and extreme temperature stability are required.
The BSC014N03LSGATMA1 features a single N-channel MOSFET with a low on-resistance of only 0.038Ω. This is the lowest on-resistance ever achieved in the 0.5 V gate voltage range and is approximately 20% lower than the industry\'s previous best mark. The part also features a low gate-threshold voltage of only 0.45V and a low-gate charge of just 34 nC. The single-channel MOSFET is designed for extreme temperature/voltage operation with no thermal runaway and no additional heatsinking needed.
The working principle of the BSC014N03LSGATMA1 can best be explained by breaking down the components of the device. The device consists of the source, drain, and gate terminals. The source terminal is connected to the device\'s power supply, while the drain terminal is connected to the load. The gate terminal is connected to a voltage source, which provides the control voltage to activate the device. When the voltage applied at the gate terminal is above a certain threshold, it causes the MOSFET to be "on" and a current can flow between the source and drain terminals. This current is proportional to the gate voltage, allowing the device to be used as an amplifier, switch, or amplifier/switch combination.
The BSC014N03LSGATMA1 is ideal for use in applications where extreme low-voltage, high-current operation is required, such as: DC-DC converter and switching power supplies, automotive power supply systems, and industrial control and instrumentation systems. The single-channel MOSFET offers a low-on-resistance and low-gate threshold voltage, making it the perfect choice for high-efficiency, long-run-time, and extreme temperature stability in these applications.
The specific data is subject to PDF, and the above content is for reference
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