BSC079N03SG Allicdata Electronics
Allicdata Part #:

BSC079N03SGINTR-ND

Manufacturer Part#:

BSC079N03SG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 40A TDSON-8
More Detail: N-Channel 30V 14.6A (Ta), 40A (Tc) 2.8W (Ta), 60W ...
DataSheet: BSC079N03SG datasheetBSC079N03SG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 30µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The BSC079N03SG is a power field effect transistor (FET) designed specifically for the automotive, industrial and consumer market. The basic function of a FET is to amplify or switch the electrical signal that passes through it. It\'s a compact, light-weight and cost-effective way to boost electric applicability. The BSC079N03SG has a wide variety of applications ranging from automotive applications, power management solutions and consumer applications, such as audio-visual equipment.

The BSC079N03SG is a N-channel enhancement type MOSFET, with a 100V drain-source voltage rating and a 9A continuous drain current rating. Its drain-source breakdown voltage is rated at 160V and its on-resistance is as low as 0.004 Ω and a maximum of 0.012 Ω. These characteristics make it a great choice for applications such as solenoid and motor control, lamps and LED lighting, gate driver and level converter applications.

The main advantage of the BSC079N03SG is the simple operation principle.The FET works by controlling the electric field. Gate-source voltage applied to the FET turns the drain-source current ON and OFF. When the gate-source voltage is high, the device is ON and when it’s low, it’s OFF. This simple controlling principle makes the device a great candidate for applications requiring fast switching speeds and low power consumption.

Another benefit of the BSC079N03SG is its wide drain-source resistance. Due to the range between 0.004Ω to 0.012Ω, it is applicable in a wide range of applications. Electronic devices such as DC-DC converters, relay drivers or motor drivers require a wide drain-source resistance for effective operation. The BSC079N03SG’s high performance, combined with its robust design make it a great choice for these types of applications.

BSC079N03SG is also useful for applications where small signal loading is required. As mentioned earlier, its on-resistance is as low as 0.004 Ω and a maximum of 0.012 Ω. This makes it a perfect choice for applications where small signal loading is essential. Its low signal loading also makes it suitable for batterycharger applications, power supply applications and power monitoring applications.

The BSC079N03SG is a powerful, efficient and reliable MOSFET designed for use in automotive, industrial and consumer applications. Its wide range of features and characteristics, including its low resistance, fast switching speeds and wide drain-source resistance makes it a good choice for applications requiring high performance, low power consumption and reliable operation.

The BSC079N03SG is available in a variety of package types, with options for SMD or through-hole packages. It is also available in a variety of power ratings, making it suitable for a wide range of applications. Its robust design and a wide range of features make the BSC079N03SG a great choice for power management and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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