
Allicdata Part #: | BSC015NE2LS5IATMA1-ND |
Manufacturer Part#: |
BSC015NE2LS5IATMA1 |
Price: | $ 0.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 33A TDSON-8 |
More Detail: | N-Channel 25V 33A (Ta), 100A (Tc) 2.5W (Ta), 50W (... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.65000 |
10 +: | $ 0.62000 |
100 +: | $ 0.56000 |
1000 +: | $ 0.44000 |
10000 +: | $ 0.20000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 12V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 1.5 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Introduction: BSC015NE2LS5IATMA1 is a transistor structured as a N-Channel Enhancement Mode Field Effect Transistor (FET), also known as a MOSFET (Metal–Oxide–Semiconductor FET). It is a single transistor and is designed to be used in high-speed switching applications.
BSC015NE2LS5IATMA1 Application Field: BSC015NE2LS5IATMA1 transistors are most often used in applications that require switching very small currents and/or switching high-speed signals. Common applications where the transistor is employed include: power management, digital logic, motor control, and switch-mode power supplies.
BSC015NE2LS5IATMA1 Working Principle: The operation of a BSC015NE2LS5IATMA1 transistor is based on the principle of using a voltage applied to the gate terminal resulting in the conduction of a current from the source to the drain terminal. When the voltage applied to the gate terminal is increased beyond the threshold voltage, the transistor switches and the current flows from the source to the drain terminal. When the voltage applied to the gate terminal is below the threshold voltage, the transistor is in the non-conducting state and the current flow is cut off.
Performance: The BSC015NE2LS5IATMA1 transistors have a wide operating temperature range of -55°C to 175°C and is rated for a maximum drain source voltage of 40V. The maximum drain current is 2.5A while the gate threshold voltage is rated at 2.5V. The transistor also has a maximum cutoff frequency of 1.5GHz and a fall time of 6ns making it well suited for high-speed switching applications.
Conclusion: The BSC015NE2LS5IATMA1 transistor is a single-device enhancement mode metal–oxide–semiconductor FET. It is designed for applications that require switching very small currents and/or high-frequencies. It has a wide operating temperature range, high operating voltage and current ratings, and a maximum cutoff frequency of 1.5GHz making it a versatile and reliable option for use in Power Management, digital logic, motor control, and switch-mode power supply applications.
The specific data is subject to PDF, and the above content is for reference
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