
Allicdata Part #: | BSC028N06LS3GATMA1TR-ND |
Manufacturer Part#: |
BSC028N06LS3GATMA1 |
Price: | $ 0.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 100A TDSON-8 |
More Detail: | N-Channel 60V 23A (Ta), 100A (Tc) 2.5W (Ta), 139W ... |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.80236 |
Vgs(th) (Max) @ Id: | 2.2V @ 93µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 139W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13000pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 175nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BSC028N06LS3GATMA1 is a vertical FET (Field Effect Transistor) which is the smallest wireless electronic components developed for cellular devices. It is modeled as ONSEMI N-Channel 60V Logic Level MOSFET. This transistor is frequently used for various applications that require high-speed switching and good power dissipation capacity.
The basic application field of BSC028N06LS3GATMA1 is as a switch, as it can rapidly transition between logical 0 (off) and logical 1 (on). This transition rate allows it to be used in a variety of ways, such as signal switching, signal conditioning, and motor control. The device is ideal for applications that require low-voltage, high-speed switching such as power-supply controllers, switching servo systems, and telephone line selectors.
The working principle behind BSC028N06LS3GATMA1 is based on MOSFET (metal oxide semiconductor field-effect transistor), a type of transistor which uses an electric field to drive current through a channel between the source and the drain. In an active state, the applied voltage creates an electric field which polarizes a channel at the drain in order to permit current flow between the drain and the source. By increasing or decreasing the voltage, the current can be corresponding controlled.
Furthermore, BSC028N06LS3GATMA1 is designed to operate within a wide temperature range due to its logic level construction, allowing it to function in temperature extremes. This makes it ideal for use in demanding applications that are exposed to extreme temperature changes. Additionally, the device can be used with an array of power sources, including direct current, alternating current, and battery.
BSC028N06LS3GATMA1 is a popular choice amongst users due to its versatility and its ability to handle high speeds. It is also very easy to install due to its compact design and its self-healing capabilities. Furthermore, the transistor’s anti-corrosive properties allow it to have a longer service life. This makes it an ideal choice for applications where switching performance and reliability are paramount.
In conclusion, BSC028N06LS3GATMA1 is a versatile, reliable, and high-speed transistor that is primarily used as a switch in a variety of applications due to its wide temperature range and its ability to run on multiple sources of power. The device’s self-healing and anti-corrosive properties make it an ideal choice for long-lasting, dependable performance.
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