
Allicdata Part #: | BSC035N10NS5ATMA1TR-ND |
Manufacturer Part#: |
BSC035N10NS5ATMA1 |
Price: | $ 1.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 100A TDSON-8 |
More Detail: | N-Channel 100V 100A (Tc) 2.5W (Ta), 156W (Tc) Surf... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 1.40000 |
10 +: | $ 1.34000 |
100 +: | $ 1.22000 |
1000 +: | $ 0.98000 |
10000 +: | $ 0.50000 |
Vgs(th) (Max) @ Id: | 3.8V @ 115µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 156W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6500pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 87nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSC035N10NS5ATMA1 is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by Infineon Technologies. MOSFETs are widely used in amplifying or switching electronic signals. The BSC035N10NS5ATMA1 is a high-power device designed for use in power applications such as power conversion and motor control. It is one of the latest advancements in high-coverage MOSFETs.
In traditional switching devices, the gate voltage is set to turn the device on or off. In an N-channel MOSFET, the gate voltage determines the conductance between the source and the drain. The higher the positive gate voltage, the higher the conductance. The BSC035N10NS5ATMA1 has an on-state resistance of 6.2 milliohms, making it a highly efficient device in switching applications.
The BSC035N10NS5ATMA1 is a specialized MOSFET that is designed to operate in high temperatures. It is rated for operation in an ambient temperature range up to 155°C. The device also has an impressive maximum drain current of 50 amps, making it suitable for power applications. It has a maximum drain-to-source voltage of 30 volts and a breakdown voltage of 1.5 volts. These specifications make the BSC035N10NS5ATMA1 ideal for use in industrial and automotive applications, such as power converters, motor control, and power supplies, which require high performance, high temperature operation.
The BSC035N10NS5ATMA1 also has several features that make it suitable for use in power applications. The device has a maximum power dissipation of 454.4 watts at a junction temperature of 150°C. It also has a built-in temperature compensation function that keeps the gate threshold voltage within a specified range over a wide temperature range. This is particularly important in power applications, as it ensures that the device will remain operational over a wide temperature range and will not be overstressed.
The BSC035N10NS5ATMA1 is also an excellent choice for applications where space is at a premium. The device is available in a TO-264 package, which has a smaller footprint compared to other packages, making it suitable for high-density applications. The device also has a wide lead spacing, which makes it easy to solder and effective for both thru-hole and surface mounting.
Overall, the BSC035N10NS5ATMA1 is an excellent choice for applications where high power and temperature operation is required. The device has a fast switching speed, a low on-state resistance, and a high current capability, making it suitable for power applications such as power conversion and motor control. It also has a small package size and wide lead spacing, making it a good choice for applications with limited space.
The specific data is subject to PDF, and the above content is for reference
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