BSC026N04LSATMA1 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PG-TDSON-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 63W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2300pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	32nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	2.6 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	23A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction
The BSC026N04LSATMA1 is a N-channel MOSFET ideal for inrush current control and the switching of an output node with low gate drive power consumption and fast switching times. This MOSFET is typically used and found in DC/DC converters, general purpose switching, amplifier protection, automotive applications and server applications. The BSC026N04LSATMA1 has many features, including low on-resistance, low input/output capacitance, and an ability to directly control an output with a logic level input. Application Field
The MOSFET was designed with versatile applications in mind. Its low on-resistance, low input/output capacitance, and the ability to directly control an output with a logic level input make it a perfect candidate for multiple application fields. One example is its use in DC/DC converter circuits. This MOSFET can be used to control the input current of the DC/DC converter, which allows for efficient control of the power supplied to the load. Having the ability to directly control an output with a logic level input makes controlling current levels with a microcontroller an easy task. The BSC026N04LSATMA1 is also used in general-purpose switching, amplifier protection, and automotive applications due to its low on-resistance and tight control of current levels. Its low input/output capacitance allows it to switch rapidly, which is important in avoiding any distortion or noise when switching. One example is its ability to switch the amplifier’s high-level signal to the low-level signal with minimal distortion and noise. Server applications are one of the most common uses for the BSC026N04LSATMA1. This MOSFET is used to reduce the inrush current that occurs at power-up in switching converters. The low gate drive power consumption and fast switching times are ideal for this application because it reduces the stress placed on the power supply circuit during startup. The low input/output capacitance also allows for fast switching, which is important in preventing any current surges from occurring.Working Principle
The BSC026N04LSATMA1 has a standard “enhancement-mode” MOSFET operation. It turns on with a rising input signal and turns off when the input signal drops below a certain threshold. The device consists of a N-channel MOSFET connected between the source and drain terminals. When the gate voltage is higher than the source voltage, the MOSFET is “on” and the drain current flows through the device. When the gate voltage is lower than the source voltage, the MOSFET is “off” and the connection between the source and drain is cut off. The MOSFET’s output characteristics are determined by the gate voltage and the drain-source voltage. It is important to keep the voltage difference between the source and the gate within the specified maximum and minimum values for proper MOSFET operation. The BSC026N04LSATMA1 is designed to minimize on-resistance and limiting the power dissipation in the MOSFET. It utilizes a low gate drive power, which allows for a smaller power dissipation and a higher current carrying capacity. It also has a low input/output capacitance, which allows for faster switching times and reduces any switching noise. Conclusion
The BSC026N04LSATMA1 is an N-channel MOSFET specifically designed for inrush current control and the switching of an output node. It has a low on-resistance, low input/output capacitance, and the ability to directly control an output with a logic level input. It is ideal for DC/DC converters, general-purpose switching, amplifier protection, automotive applications, and server applications. Its low on-resistance, low input/output capacitance, and the ability to directly control an output with a logic level input make it a great MOSFET for a wide variety of applications.

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