Allicdata Part #: | BSC0993NDATMA1TR-ND |
Manufacturer Part#: |
BSC0993NDATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 8TISON |
More Detail: | Mosfet Array 2 N-Channel 17A (Ta) Surface Mount ... |
DataSheet: | BSC0993NDATMA1 Datasheet/PDF |
Quantity: | 1000 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel |
FET Feature: | Standard |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta) |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TISON-8 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BSC0993NDATMA1 is a combination of transistors within an integrated circuit device. It is part of a series of packages containing multiple transistors and is known as a transistor array. It is composed of two different kinds of transistors - FETs and MOSFETs - each of which has its own specific purpose and working principle.
FETs, or field-effect transistors, are transistors that utilize an electric field to control the current flow between two terminals. They are also known as unipolar transistors because of the fact that they have only one current-carrying terminal. FETs are typically used as amplifiers, switches, voltage-controlled resistors, and voltage-controlled capacitors. In the BSC0993NDATMA1 array, FETs are used to control the gate drive of the transistors.
MOSFETs, or metal-oxide-semiconductor field-effect transistors, are transistors that use an electric field to switch controlled current between two terminals. MOSFETs can be used as logic gates, voltage-controlled resistors, voltage-controlled capacitors, amplifiers, and switches. In the BSC0993NDATMA1 array, MOSFETs are used to control the on-state and low-side body drive of the transistors.
The BSC0993NDATMA1 package contains several devices that work together to create an advantageous electronic configuration. The package includes several field effect transistors (FETs), metal oxide semiconductor field effect transistors (MOSFETs), and several discrete components. The package contains two separate types of active components: the FETs, which control gate drive, and the MOSFETs, which control the on-state and low-side body drive. The package also contains various discrete components that provide voltage, current, temperature, and other circuit parameters.
The working principle behind the BSC0993NDATMA1 array is to use FETs and MOSFETs to control the amount of current that flows through different transistors in the circuit. The FETs and MOSFETs are located at strategic locations of the circuit and are used to control the voltage and current levels at different points on the circuit. This allows for a more efficient operation of the circuit, as the transistors do not have to be switched continuously. The FETs and MOSFETs act as voltage-controlled resistors, as they can be used to either increase or decrease the resistance of the transistors depending on the voltage applied to them.
The BSC0993NDATMA1 is mainly used in the fields of power supply design, power converters, and motor control. It can be used to create efficient, reliable circuits that offer superior performance compared to other available solutions. The combination of FETs and MOSFETs used in this array means that it offers great flexibility when it comes to controlling the current flow of a circuit. It can also provide superior levels of protection against reversed or excessive currents. Additionally, the array also helps reduce the required board space, thus making the design process easier and quicker.
In conclusion, the BSC0993NDATMA1 is a transistor array package that contains several FETs and MOSFETs. It is mainly used in the fields of power supply design, power converters, and motor control. It works by using FETs and MOSFETs to control the amount of current that flows through different transistors in the circuit. This offers better performance, more reliable circuits, and higher levels of protection against reversed or excessive currents. The package also helps reduce the required board space, thus making the design process easier and quicker.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BSC027N06LS5ATMA1 | Infineon Tec... | 0.71 $ | 1000 | MOSFET N-CH 60V 100A 8TDS... |
BSC028N06NSTATMA1 | Infineon Tec... | 0.71 $ | 1000 | DIFFERENTIATED MOSFETSN-C... |
BSC019N06NSATMA1 | Infineon Tec... | 0.75 $ | 1000 | DIFFERENTIATED MOSFETSN-C... |
BSC011N03LSTATMA1 | Infineon Tec... | 0.78 $ | 1000 | DIFFERENTIATED MOSFETSN-C... |
BSC010N04LSTATMA1 | Infineon Tec... | -- | 5000 | DIFFERENTIATED MOSFETSN-C... |
BSC016N06NSTATMA1 | Infineon Tec... | 1.08 $ | 1000 | DIFFERENTIATED MOSFETSN-C... |
BSC014N06NSTATMA1 | Infineon Tec... | 1.23 $ | 1000 | DIFFERENTIATED MOSFETSN-C... |
BSC0904NSIATMA1 | Infineon Tec... | 0.22 $ | 1000 | MOSFET N-CH 30V 20A 8TDSO... |
BSC016N03LSGATMA1 | Infineon Tec... | 0.49 $ | 1000 | MOSFET N-CH 30V 100A TDSO... |
BSC022N03SG | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 100A TDSO... |
BSC032N03SG | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 100A TDSO... |
BSC042N03ST | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 50A TDSON... |
BSC059N03ST | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 50A TDSON... |
BSC022N03S | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 50A TDSON... |
BSC024N025S G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 100A TDSO... |
BSC027N03S G | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 100A TDSO... |
BSC032N03S | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 50A TDSON... |
BSC037N025S G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 100A TDSO... |
BSC052N03S G | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 80A TDSON... |
BSC072N025S G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 40A TDSON... |
BSC085N025S G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 35A TDSON... |
BSC094N03S G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 35A TDSON... |
BSC0908NSATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 34V 49A 8TDSO... |
BSC042N03S G | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 95A TDSON... |
BSC080N03LSGATMA1 | Infineon Tec... | 0.2 $ | 1000 | MOSFET N-CH 30V 53A TDSON... |
BSC050N03LSGATMA1 | Infineon Tec... | 0.22 $ | 1000 | MOSFET N-CH 30V 80A TDSON... |
BSC060P03NS3EGATMA1 | Infineon Tec... | 0.35 $ | 1000 | MOSFET P-CH 30V 17.7A TDS... |
BSC066N06NSATMA1 | Infineon Tec... | 0.37 $ | 1000 | MOSFET N-CH 60V 64A 8TDSO... |
BSC026NE2LS5ATMA1 | Infineon Tec... | 0.37 $ | 1000 | MOSFET N-CH 25V 24A 8TDSO... |
BSC098N10NS5ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 60A 8TDS... |
BSC014N03LSGATMA1 | Infineon Tec... | 0.5 $ | 1000 | MOSFET N-CH 30V 100A TDSO... |
BSC072N08NS5ATMA1 | Infineon Tec... | 0.51 $ | 1000 | MOSFET N-CH 80V 74A 8TDSO... |
BSC030N08NS5ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 80V 100A 8TDS... |
BSC017N04NSGATMA1 | Infineon Tec... | 0.74 $ | 1000 | MOSFET N-CH 40V 100A TDSO... |
BSC097N06NSTATMA1 | Infineon Tec... | 0.3 $ | 1000 | DIFFERENTIATED MOSFETSN-C... |
BSC0909NSATMA1 | Infineon Tec... | 0.16 $ | 1000 | MOSFET N-CH 34V 44A 8TDSO... |
BSC090N03LSGATMA1 | Infineon Tec... | 0.2 $ | 1000 | MOSFET N-CH 30V 48A TDSON... |
BSC080N03MSGATMA1 | Infineon Tec... | 0.2 $ | 1000 | MOSFET N-CH 30V 53A TDSON... |
BSC057N03MSGATMA1 | Infineon Tec... | 0.22 $ | 1000 | MOSFET N-CH 30V 71A TDSON... |
BSC057N03LSGATMA1 | Infineon Tec... | 0.25 $ | 1000 | MOSFET N-CH 30V 71A TDSON... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...