BSS123-7

BSS123-7 Application Field and Working Principle

BSS123-7 is a N-channel enhancement mode MOSFET with low on-resistance (RDS(on)). It is suitable for use in high-voltage 4 to 100V switch-mode applications and offers excellent performance due to its small dimensions and low gate charge (Qg). The maximum drain-source voltage of BSS123-7 is 100V, and its drain current ranges from 0.7A to 3.5A.

Application Fields

BSS123-7 is specifically designed for high voltage power switches, such as: DC/DC / AC/DC converters, Backlight Inverters and Brushless DC motor Control. The device also offers fast switching performance and low gate charge. It is suitable for use in applications where high-speed switching is necessary and offers excellent avalanche immunity.

Working Principle

The working principle of BSS123-7 is based on the MOSFET operating principle. The MOSFET has a gate voltage applied at its gate, and in turn, a channel forms below the gate that connects the drain and source. When the channel forms, the resistance between the drain and source decreases and in turn, the voltage drop between them is reduced. As the voltage drop is reduced between the drain and source, current begins to flow, and a conducting channel (i.e. MOSFET drain-source channel) is formed. This is known as the "on" state of the MOSFET. By adjusting the gate voltage, the current flow or on-resistance (RDS(on)) can be controlled.

Conclusion

BSS123-7 is an N-channel enhancement mode MOSFET with low on-resistance, suitable for use in high-voltage switch-mode applications. The device offers fast switching performance and low gate charge, and the working principle is based on the MOSFET operating principle. The device is capable of providing reliable performance and offers excellent avalanche immunity.