BSS139H6327XTSA1 Allicdata Electronics
Allicdata Part #:

BSS139H6327XTSA1TR-ND

Manufacturer Part#:

BSS139H6327XTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 250V 100MA SOT23
More Detail: N-Channel 250V 100mA (Ta) 360mW (Ta) Surface Mount...
DataSheet: BSS139H6327XTSA1 datasheetBSS139H6327XTSA1 Datasheet/PDF
Quantity: 45000
Stock 45000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 56µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360mW (Ta)
FET Feature: Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds: 76pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 14 Ohm @ 100µA, 10V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BSS139H6327XTSA1 is a single N-Channel MOSFET in a SOT-23FL package. This device has a number of features which make it suitable for many different applications. It offers good static and dynamic performance, low on-resistance and low input capacitance, making it especially suitable for low voltage applications.The BSS139H6327XTSA1 offers a number of different applications. In the audio field the device can be used as a pre-amplifier, amplifier or buffer. It can also be used as an input switch, due to its low on-resistance and low capacitance. In this application it can be used to switch signals from different sources or power supplies.In the power field, the device can be used for a variety of power management and switching applications. It can be used to switch power from different sources or to different load circuits. The device can also be used as an output stage in a switchmode power supply. In this application the device can be used to control the output voltage, current and power efficiently.The BSS139H6327XTSA1 is a MOSFET, meaning that it uses a gate to control the flow of electrons. When a voltage is applied to the gate, the MOSFET will turn on and the electrons will be allowed to flow between the source and the drain. The on-resistance of the device will determine the amount of current that can flow and the input capacitance will determine the amount of charge that can be stored.The BSS139H6327XTSA1 is an N-Channel MOSFET, meaning that it can be used to switch negative voltages, currents and power. It is important to note that the device can only be used with negative voltages, because the gate voltage must be below the source voltage in order for the device to turn on.The BSS139H6327XTSA1 has a breakdown voltage (Vds) of 30V, which means that it can be used in applications where it may be subjected to higher voltages. The on-resistance (Rds) of the device is 0.22Ω, which means that it can handle up to 1.25A at 25°C. The input capacitance (Ciss) of the device is typically 16pF, which means it can store up to 16µC of charge.In conclusion, the BSS139H6327XTSA1 is a high performance single N-Channel MOSFET in a SOT-23FL package. It offers good static and dynamic performance, low on-resistance and low input capacitance, making it suitable for low voltage applications such as audio pre-amplifiers, amplifiers and buffers, switchmode power supplies and input switches.

The specific data is subject to PDF, and the above content is for reference

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