Allicdata Part #: | BSS139H6327XTSA1TR-ND |
Manufacturer Part#: |
BSS139H6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 250V 100MA SOT23 |
More Detail: | N-Channel 250V 100mA (Ta) 360mW (Ta) Surface Mount... |
DataSheet: | BSS139H6327XTSA1 Datasheet/PDF |
Quantity: | 45000 |
Vgs(th) (Max) @ Id: | 1V @ 56µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta) |
FET Feature: | Depletion Mode |
Input Capacitance (Ciss) (Max) @ Vds: | 76pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 3.5nC @ 5V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 14 Ohm @ 100µA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 0V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSS139H6327XTSA1 is a single N-Channel MOSFET in a SOT-23FL package. This device has a number of features which make it suitable for many different applications. It offers good static and dynamic performance, low on-resistance and low input capacitance, making it especially suitable for low voltage applications.The BSS139H6327XTSA1 offers a number of different applications. In the audio field the device can be used as a pre-amplifier, amplifier or buffer. It can also be used as an input switch, due to its low on-resistance and low capacitance. In this application it can be used to switch signals from different sources or power supplies.In the power field, the device can be used for a variety of power management and switching applications. It can be used to switch power from different sources or to different load circuits. The device can also be used as an output stage in a switchmode power supply. In this application the device can be used to control the output voltage, current and power efficiently.The BSS139H6327XTSA1 is a MOSFET, meaning that it uses a gate to control the flow of electrons. When a voltage is applied to the gate, the MOSFET will turn on and the electrons will be allowed to flow between the source and the drain. The on-resistance of the device will determine the amount of current that can flow and the input capacitance will determine the amount of charge that can be stored.The BSS139H6327XTSA1 is an N-Channel MOSFET, meaning that it can be used to switch negative voltages, currents and power. It is important to note that the device can only be used with negative voltages, because the gate voltage must be below the source voltage in order for the device to turn on.The BSS139H6327XTSA1 has a breakdown voltage (Vds) of 30V, which means that it can be used in applications where it may be subjected to higher voltages. The on-resistance (Rds) of the device is 0.22Ω, which means that it can handle up to 1.25A at 25°C. The input capacitance (Ciss) of the device is typically 16pF, which means it can store up to 16µC of charge.In conclusion, the BSS139H6327XTSA1 is a high performance single N-Channel MOSFET in a SOT-23FL package. It offers good static and dynamic performance, low on-resistance and low input capacitance, making it suitable for low voltage applications such as audio pre-amplifiers, amplifiers and buffers, switchmode power supplies and input switches.
The specific data is subject to PDF, and the above content is for reference
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