BSS138W

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The BSS138W is an N channel enhancement mode vertical D-MOS transistor, or Field-Effect Transistor (FET). It works by using an electric field to control the conductivity of a material. Although the BSS138W is a field-effect transistor, it is part of a category of FETs known as “MOSFETs.” These transistors use the Metal-Oxide-Semiconductor (MOS) structure. The MOS structure allows for much smaller transistors compared to other FETs since a dielectric layer is inserted between the gate and the substrate. This dielectric layer reduces the junction capacitance, which can be beneficial if you need high speed switching. Of the MOSFETs, the BSS138W is a “Single” type, meaning it is composed of a single MOS transistor, rather than multiple transistors connected in series.

The primary application of the BSS138W is to use the transistor to switch high currents with low voltage power. This is accomplished by connecting the high side of the load to the V(Drain), the low side of the load to the V(Source), and the control signal to the V(Gate). Upon applying a voltage to the V(Gate), a current will flow through the channel from the V(Drain) to the V(Source). As you increase the voltage from the V(Gate), the current through the channel will also increase. This allows for efficient control of the amount of current flowing from the V(Drain) to the V(Source).

The BSS138W is ideal for applications that require a low on-resistance and low gate charge. These features of the BSS138W make it very suitable for applications that require power efficiency and high speed switching. This could include motor control, LED drivers, and power management in a variety of applications.

In terms of specifications, the BSS138W has a maximum current rating of 16 Amps, an RDS(on) of 3.6 Ohms, and a max gate voltage of ±20V. It can handle a continuous drain-source voltage of 80V and peak of 100V. With a threshhold voltage of 1.5V, it has a max switching speed of 25nC. Additionally, the BSS138W has a total gate charge of 32nC, making it one of the most efficient transistors available.

In conclusion, the BSS138W is an N channel internal enhancement mode vertical D-MOS transistor, or MOSFET. It is part of the “Single” category of MOSFETs, meaning it is composed of a single MOS transistor for high efficiency and power efficiency. The BSS138W has a maximum current rating of 16 Amps, an RDS(on) of 3.6 Ohms, and a max gate voltage of ±20V. It is often used for applications that require power efficiency and high speed switching, such as motor control, LED drivers, and power management.

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