Allicdata Part #: | BSS126H6327XTSA1-ND |
Manufacturer Part#: |
BSS126H6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 0.021A SOT23 |
More Detail: | N-Channel 600V 21mA (Ta) 500mW (Ta) Surface Mount ... |
DataSheet: | BSS126H6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.6V @ 8µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | Depletion Mode |
Input Capacitance (Ciss) (Max) @ Vds: | 28pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 2.1nC @ 5V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 500 Ohm @ 16mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 0V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 21mA (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BSS126H6327XTSA1 is a N-channel, Ultra-Low RDS(on)MOSFET transistors, using InfiniteBox technology, which helps to reduce RDS(on)and a counterflow, optimized energetic N-channel MOSFET. This transistor has a variety of potential applications, such as synchronous rectification, hot-swapping, switch machines, high frequency electrical drives, and power supplies. It can operate over a wide range of voltages and currents.
BSS126H6327XTSA1 Application Field
The BSS126H6327XTSA1 is a versatile transistor that is used in a variety of applications. It is particularly ideal for use in synchronous rectification, hot-swapping, switch machines, high frequency electrical drives, and power supplies due to its high efficiency, low RDS(on), and wide voltage range. It is also commonly used in motors, pumps, and instant on/off devices due to its high-speed switching capability and fast rise time.
The BSS126H6327XTSA1 is also well-suited for use in surge protection and motor speed control applications. The transistor’s small design and low threshold voltage also make it ideal for use in automotive and consumer electronics applications. In addition, its low gate drive voltage requirement allows it to be used in space-constrained applications.
BSS126H6327XTSA1 Working Principle
The BSS126H6327XTSA1 transistor is a type of field effect transistor (FET). In this type of transistor, a voltage applied to the gate terminal causes a drain-source current to flow between the source and drain. The intensity of the current is determined by the voltage applied to the gate, which modulates the conductivity of the channel between the source and drain. The gate of a FET transistor is insulated from the channel by an insulator, known as a gate dielectric.
The gate voltage can be used to turn the transistor on or off, depending on the voltage needed to switch the transistor. In the case of the BSS126H6327XTSA1 transistor, a low-voltage gate drive is needed for turning on the transistor. When the gate voltage is high enough, the transistor can be switched off, which prevents the current from flowing.
The BSS126H6327XTSA1 transistor is designed to have low power dissipation and high efficiency. To achieve this, it uses InfiniteBox technology, which helps to reduce the RDS(on)by providing a counterflow of electrons. This helps to reduce the power dissipation and improves efficiency, allowing the transistor to operate at higher temperatures, while still achieving high performance.
Conclusion
The BSS126H6327XTSA1 transistor is a versatile and efficient N-channel MOSFET transistor that is suitable for a wide range of applications. It is particularly ideal for use in synchronous rectification, hot-swapping, switch machines, high frequency electrical drives, and power supplies due to its high efficiency, low RDS(on), and wide voltage range. The transistor’s small design and low threshold voltage also make it ideal for use in automotive and consumer electronics applications. Plus, its low gate drive voltage requirement allows it to be used in space-constrained applications.
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