BSS126H6327XTSA1 Allicdata Electronics
Allicdata Part #:

BSS126H6327XTSA1-ND

Manufacturer Part#:

BSS126H6327XTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 0.021A SOT23
More Detail: N-Channel 600V 21mA (Ta) 500mW (Ta) Surface Mount ...
DataSheet: BSS126H6327XTSA1 datasheetBSS126H6327XTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.6V @ 8µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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BSS126H6327XTSA1 is a N-channel, Ultra-Low RDS(on)MOSFET transistors, using InfiniteBox technology, which helps to reduce RDS(on)and a counterflow, optimized energetic N-channel MOSFET. This transistor has a variety of potential applications, such as synchronous rectification, hot-swapping, switch machines, high frequency electrical drives, and power supplies. It can operate over a wide range of voltages and currents.

BSS126H6327XTSA1 Application Field

The BSS126H6327XTSA1 is a versatile transistor that is used in a variety of applications. It is particularly ideal for use in synchronous rectification, hot-swapping, switch machines, high frequency electrical drives, and power supplies due to its high efficiency, low RDS(on), and wide voltage range. It is also commonly used in motors, pumps, and instant on/off devices due to its high-speed switching capability and fast rise time.

The BSS126H6327XTSA1 is also well-suited for use in surge protection and motor speed control applications. The transistor’s small design and low threshold voltage also make it ideal for use in automotive and consumer electronics applications. In addition, its low gate drive voltage requirement allows it to be used in space-constrained applications.

BSS126H6327XTSA1 Working Principle

The BSS126H6327XTSA1 transistor is a type of field effect transistor (FET). In this type of transistor, a voltage applied to the gate terminal causes a drain-source current to flow between the source and drain. The intensity of the current is determined by the voltage applied to the gate, which modulates the conductivity of the channel between the source and drain. The gate of a FET transistor is insulated from the channel by an insulator, known as a gate dielectric.

The gate voltage can be used to turn the transistor on or off, depending on the voltage needed to switch the transistor. In the case of the BSS126H6327XTSA1 transistor, a low-voltage gate drive is needed for turning on the transistor. When the gate voltage is high enough, the transistor can be switched off, which prevents the current from flowing.

The BSS126H6327XTSA1 transistor is designed to have low power dissipation and high efficiency. To achieve this, it uses InfiniteBox technology, which helps to reduce the RDS(on)by providing a counterflow of electrons. This helps to reduce the power dissipation and improves efficiency, allowing the transistor to operate at higher temperatures, while still achieving high performance.

Conclusion

The BSS126H6327XTSA1 transistor is a versatile and efficient N-channel MOSFET transistor that is suitable for a wide range of applications. It is particularly ideal for use in synchronous rectification, hot-swapping, switch machines, high frequency electrical drives, and power supplies due to its high efficiency, low RDS(on), and wide voltage range. The transistor’s small design and low threshold voltage also make it ideal for use in automotive and consumer electronics applications. Plus, its low gate drive voltage requirement allows it to be used in space-constrained applications.

The specific data is subject to PDF, and the above content is for reference

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