BSS138DWQ-7 Discrete Semiconductor Products

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	50V
Current - Continuous Drain (Id) @ 25°C:	200mA
Rds On (Max) @ Id, Vgs:	3.5 Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	--
Input Capacitance (Ciss) (Max) @ Vds:	50pF @ 10V
Power - Max:	200mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363

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BSS138DWQ-7 is an essential component of transistors, MOSFETs and arrays. It is an N-channel enhancement-mode FET array composed of two separate N-Channel FETs and has a maximum gate voltage of 8 Volts. The gate-source and gate-drain maximum voltages can also be up to 8V. BSS138 transistors are mainly used in applications such as power management, driver circuits, and analog-to-digital converters (ADC). Its maximum current is 1 A so it is able to perform a variety of functions according to the user’s needs.======Working principleWhen the gate voltage, VG, is applied, the BSS138DWQ-7 FET is activated and there is a dramatic decrease in the resistance between the source and drain. Since the FET is composed of two separate N-channel FETs, increased control of the channel can be obtained with smaller voltages. Because the device is an FET array, it is a voltage-controlled device. It functions as a switch when a voltage of zero or greater is applied to the gate, and can control the current to either the source or the drain. If the voltage is zero, then the current between the source and the drain is so small that the device appears to be off. The FET array also has the advantage of having a high input impedance. The input bias current is also very low, and can be driven by high impedance gate sources making the gate drive easier and enabling the current to be closely controlled. The gate drive for the BSS138DWQ-7 is typically around 4V and can be driven from any signal source with driving capability. A Gate Voltage of 8V is the maximum that should be used with the device. With normal operation, the gate-drain leakage will be around 50nA and this can be used for voltage and current calculations.======Application fieldBSS138DWQ-7 transistor is a popular device used in many applications. Power Management applications typically use a FET array because the gate power is low, making the FET array a very efficient device. Power Mosfets are also ideal for driving a load in order to conserve power. For example, the BSS138DWQ-7 can be used to create a multiple output power supply.Driver circuits are also a popular FET application and the BSS138DWQ-7 is used in many of these devices. The device has a low input bias current and a high input impedance making it ideal for driving heavier loads.ADCs are also using the BSS138DWQ-7 FET array for signal processing. ADC circuits are used to convert analog signals into digital signals and the FET array enables precision control of the analog to digital conversion process.In summary, the BSS138DWQ-7 FET array is an essential device in Transistors, MOSFETs and Arrays. It is used in numerous applications including power management, driver circuits and analog-to-digital converters. The device has a high input impedance, a low input bias current, and a maximum gate voltage of 8V. It is also available in a variety of different packages for various applications.

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