BSS138P,215

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Field Effect Transistor (FET) is a semiconductor device which is often used in many applications. The FETs can be divided into two main types, such as MOSFETs and Single FETs. The BSS138P,215 is a type of single FET which is specially designed for low voltage applications, such as signal conditioning, in low voltage integrated circuit (IC) systems.

The BSS138P,215 is a N-channel enhancement mode FET with a drain-source voltage (Vds) of 60 Volts, a drain current (Id) capability of 0.4 Amps, a gate source voltage (Vgs) of 30 Volts, and a threshold voltage (Vgs_th) of 1.7 Volts. It is constructed with a specially selected, low on-resistance, 125 PPM/°C junction to source thermal resistance, a total drain to source breakdown voltage of 60V. The BSS138P,215 offers a very low leakage and an improved high voltage capability for its size.

The working principle of the BSS138P,215 is based on the principle of MOS transistor, which uses the Effects of Electric field (E-field) to modulate the current conduction between the two electrodes. Its two main components are the source, where the current enters the device, and the drain, where the current exits the device. An electric field is generated by applying a voltage between the gate and the source. This electric field modulates the conductivity of the drain-source channel, thus controlling the current flow between these two electrodes. As the voltage increases, more current is allowed to flow through the channel and the device enters into its saturation region. The current is controlled by adjusting the voltage of the gate with respect to the voltage of the source.

The BSS138P,215 can be used in various applications, such as in logic level converters, amplifiers, analog switches, oscillators and resistors. It can also be used for signal conditioning in low voltage IC systems. It is also suitable for voltage buffering and protection of sensitive electrical components. The BSS138P,215 also finds its applications in mobile phones, digital cameras and other consumer electronic devices.

The BSS138P,215 is an ideal low voltage device for many electronic applications. It has a low on-resistance, low leakage and high voltage capability which makes it an efficient device. It is also easy to integrate into many IC systems. Overall, the BSS138P,215 provides improved performance and excellent thermal stability for various single FET applications.

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