Allicdata Part #: | BSS138TR-ND |
Manufacturer Part#: |
BSS138 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 50V 220MA SOT-23 |
More Detail: | N-Channel 50V 220mA (Ta) 360mW (Ta) Surface Mount ... |
DataSheet: | BSS138 Datasheet/PDF |
Quantity: | 124 |
Gate Charge (Qg) (Max) @ Vgs: | 2.4nC @ 10V |
Base Part Number: | BSS138 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 27pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Rds On (Max) @ Id, Vgs: | 3.5 Ohm @ 220mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 220mA (Ta) |
Drain to Source Voltage (Vdss): | 50V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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This article will discuss the BSS138 application field and working principle, a type of single MOSFET (metal-oxide-semiconductor field-effect transistor). The BSS138 is a general-purpose small-signal N-Channel enhancement-mode field-effect transistors. It is mainly used in low-power switching applications and is capable of high-speed switching. The BSS138 is similar to the 2N7000 and SST211, but has some differences in their characteristics. The BSS138 offers better logic-level compatibility than the SST211.
The BSS138 is the model name of a series of N-channel enhancement mode metal oxide semiconductor field-effect transistors (MOSFETs). The BSS138 is a general-purpose MOSFET that offers excellent RF performance and good ESD protection. It is widely used in a variety of low-voltage, low-power switching applications, such as amplifiers, switches, and limiters.
The BSS138 is a three-terminal device built with an N-type (non-conductive) channel. It consists of a drain, gate, and source. The drain and source form the terminals of the device, which form an N-type channel when the voltage is applied to the gate. The device operates in enhancement mode, which means that the drain current is increased with increased gate voltage. This increase in drain current is limited by the device size, also known as “on" resistance.
The BSS138 has two basic operating modes, the linear mode and the saturation mode. In the linear mode, the drain current is directly proportional to the gate-source voltage. In this mode the device can be used in low-power linear amplifying applications. In the saturation mode, the drain current is limited by the device size and the applied gate-source voltage. This mode is mainly used in transistor switching applications.
The device is typically used in small signal switching applications when a high switching speed is not required. The BSS138 can typically switch off faster than 1 nanosecond and can switch on at a rate of 300 nanoseconds, making it suitable for low-power, low-frequency switching. The device also offers low power dissipation and can operate at supply voltages as low as 4V.
The BSS138 can be used in a variety of low-power, low-voltage switching applications. It is suitable for use in RF, audio, and logic circuits and can be used in interface applications such as motor control, power supply control, and DC-DC converters. The device is also suitable for switching applications such as level shifting, control signal, and signal buffering.
The BSS138 has a wide range of temperature and frequency capabilities, making it suitable for use in a variety of applications. The device can operate in temperatures from -55°C to +125°C and can be used in switching circuits up to 10 MHz. This makes it suitable for a wide range of low-power, low-voltage switching applications.
The BSS138 is a versatile and cost-effective MOSFET with excellent RF performance and low power dissipation. It is suitable for a wide range of switching applications, from low-power, low-voltage logic circuits to audio and RF switching circuits. The device has a wide range of temperature capabilities, making it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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