BSS138DW-7 Discrete Semiconductor Products

The BSS138DW-7 is an n-channel, enhancement-mode field-effect transistor (FET), part of a metal-oxide semiconductor field-effect transistor (MOSFET) array. This device merges the benefits of both junction and MOSFET technologies for power management and loads that require high-performance switching. It has a maximum supply voltage of 20 volts and a maximum drain current of 1 ampere. The device also has a very low static drain-source on-resistance of 5 ohms and can be used as a single- or dual-switched FET.

The working principle of the BSS138DW-7 is based on the movement of electrons between the source and the drain. When a voltage is applied between the source and the drain, an electric field is created, causing the electrons at the source to move towards the drain. This movement of electrons is called electron drift and forms the basis for the device’s operation. Once electrons reach the drain, the electric field is weakened and the electrons are repelled back to the source, thus completing the cycle and allowing current to flow.

The BSS138DW-7 is applicable in high-current, high-frequency switching applications such as DC-DC converters, motor control, and other power management tasks. It is particularly well suited for applications where low voltage operation is needed and where small circuit layouts are required. This device can also be used in high-gain amplifiers and in conditioning circuits. Furthermore, it is suitable for both dual and single-switched FET designs.