Allicdata Part #: | BSS159NH6327XTSA1-ND |
Manufacturer Part#: |
BSS159NH6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 230MA SOT23 |
More Detail: | N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount ... |
DataSheet: | BSS159NH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.4V @ 26µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta) |
FET Feature: | Depletion Mode |
Input Capacitance (Ciss) (Max) @ Vds: | 44pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 2.9nC @ 5V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 3.5 Ohm @ 160mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 0V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 230mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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.The BSS159NH6327XTSA1 power MOSFET is a triangular single-source transistor that is used in various high-power applications. This device can be used for both linear and switching-mode applications, as it combines exceptional on-state current flow with very low gate-level drive requirements. It is often used in a variety of power management scenarios, from DC-DC converters to motor control. The BSS159NH6327XTSA1 is part of the family of terminal switches, which are used to power millions of electronic devices around the world.
The BSS159NH6327XTSA1 is a simple MOSFET transistor with a single source terminal and two drain terminals. The source terminal is connected to the gate voltage supply, while the drain terminals are connected to the load. When the gate voltage is applied to the source terminal, it creates an electrical field that attracts electrons from the source terminal to the drain terminals. This creates an electrical current flowing between the drain terminals and allows the device to act as a switch.
When the BSS159NH6327XTSA1 is used as a switch, the difference between the gate voltage and the drain-to-source voltage is referred to as the "on-state" voltage. It is important to note that the drain-to-source voltage must be greater than the gate voltage in order for the transistor to be in the on-state. The drain-to-source voltage is referred to as the "cut-off" voltage when the transistor is in the off-state. The power MOSFET has a limited on-state resistance, so it should not be used in applications that require high levels of current flow.
The BSS159NH6327XTSA1 is an excellent choice for applications that require solutions for high power and low gate drive requirements. It is often used in DC-DC converters, motor control systems, and DC-AC circuits. The device is ideal for these applications because it has low drive requirements, a low on-state resistance, and high power ratings. As a result, it can handle large amounts of current and power, while providing power-management solutions.
The BSS159NH6327XTSA1 is an ideal choice for applications that require high-power and low gate drive requirements. It is well suited for a variety of power management applications, such as DC-DC converters, motor control systems, and DC-AC circuits. The device is designed to handle high levels of current and power, while still providing low-power requirements. Therefore, it is well suited for applications that require a combination of high power and low gate drive needs.
The specific data is subject to PDF, and the above content is for reference
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