Allicdata Part #: | BSS169H6327XTSA1TR-ND |
Manufacturer Part#: |
BSS169H6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 170MA SOT23 |
More Detail: | N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount... |
DataSheet: | BSS169H6327XTSA1 Datasheet/PDF |
Quantity: | 50000 |
Vgs(th) (Max) @ Id: | 1.8V @ 50µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta) |
FET Feature: | Depletion Mode |
Input Capacitance (Ciss) (Max) @ Vds: | 68pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 2.8nC @ 7V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 170mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 0V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BSS169H6327XTSA1 transistors are a kind of insulated gate bipolar transistors, which are designed and intended for use in applications for which a low voltage and low gate current are important considerations. The outstanding feature of this transistor is its high switching speed. It is mainly used in applications where high voltage and high power are needed and thermal management is not a problem.
BSS169H6327XTSA1 transistors are part of the FET family (Field-effect transistors) and more specifically, it belongs to the single-MOSFET (Metal-oxide semiconductor field-effect transistors) family. These transistors are voltage-controlled devices that are used to control the current passing through them.
The basic structure of a FET is composed of three terminals: a source, a drain, and a gate. The source and drain are the two devices that carry current between them, and the gate is a control element which, when coupled with a voltage, allows or blocks current from passing between the source and drain.
MOSFETs are characterized by their high input impedance compared to bipolar junction transistors, as well as their ease of use in integrated circuits (ICs). Their main application field is digital logic circuits (such as memory devices, microprocessors, etc.), but they also find application in analog circuits as well.
The working principle of BSS169H6327XTSA1 is based on the basic transistor structure with a voltage-controlled gate. When a voltage is applied to the gate, it induces an electric field on the surface of the base material and generates a current, which stimulates the transfer of electrons between the source and drain. This modulation of current through the transistor gives the transistor its control capabilities.
The primary benefit of BSS169H6327XTSA1 transistors is their low voltage and low gate current requirements. This means that they can be used in applications where power is of the utmost priority, and they are capable of achieving higher switching speeds than other transistors. They are also capable of dealing with larger voltages and currents, making them great for applications where thermal management is not a problem.
In conclusion, BSS169H6327XTSA1 transistors are an important part of the FET family, and belong to the single-MOSFET family specifically. With their low voltage and low gate current requirements as well as their high switching speed, these transistors are ideal for applications where power is of the utmost priority. Their primary use is in digital logic circuits, but they can also find application in analog circuits.
The specific data is subject to PDF, and the above content is for reference
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