BUK7275-100A,118

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	89W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1210pF @ 25V
Vgs (Max):	±20V
Series:	Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs:	75 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	21.7A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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• Introduction of BUK7275-100A,118

BUK7275-100A,118 is a single n-channel MOSFET (Metal–oxide–semiconductor field-effect transistor) produced by ROHM Semiconductor. It belongs to FETs, MOSFETs and Single transistors product categories. It is an advanced power MOSFET that is built using Trench Gate Field-stop technology,whereby a uniformed electron concentration is obtained by adjusting the distances between electrodes in metal gate region. By using this technology, low noises and high switching speed can be acquired. It is the ideal solution for high-end electronic applications.

• Features

BUK7275-100A,118 is packaged in TO-263AB standardized package,its overall dimensions are 6.6mm*4.47mm*2.2mm. It is designed with external gate-source resistance for improved EMI performance and optimized maximum on-state resistance. Also, a low input capacitance provides faster switching speed.

• Application Fields

BUK7275-100A,118 is mainly applied in Power Management, General purpose, BASIC, Periperal logic and DC-DC, etc. It is suitable to use in Power Delivery System, Switch Mode Power Supply (SMPS) motor driver, along with general purpose power switch applications. It provides a very low RDS(on) and fast switching, that can improve overall efficiency of the design.

• Working Principle

MOSFETs such as BUK7275-100A,118 are voltage-controlled devices, allowing an external voltage to add into the output of transistors and change the state of transistors throughout the on and off state. When the controlling voltage is applied to the basic on/off-state, the MOSFETS turn on or off electronically. This is done using the gate, which is the control terminal to the MOSFETs. The gate is fully insulated from the source and drain of the MOSFETs, so it receives voltage without electrically connecting to it. When the gate is turned on, the MOSFETs can quickly switch between the on and off states. This is done by setting a voltage in the gate to allow the current to flow through the source and drain of the device. When the gate is turned off, the MOSFETs remain in the off state. The BUK7275-100A,118 is equipped with a feature that optimizes the maximum on-state resistance, which allows for lower input capacitance. The low input capacitance offers faster switching speed which is ideal suited for applications that require short switching duration. In conclusion, BUK7275-100A,118 is a single n-channel MOSFET that is designed for high-end electronic applications. It offers improved EMI performance, optimized maximum on-state resistance and low input capacitance, making it suitable for applications such as Power Delivery System and general purpose power switch. Thanks to its Trench Gate Field-stop technology, the device can achieve low noise and high switching speed, which further provides better efficiency and faster switching duration in applications.

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