BUK7509-75A,127 Allicdata Electronics
Allicdata Part #:

568-9811-5-ND

Manufacturer Part#:

BUK7509-75A,127

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 75V 75A TO220AB
More Detail: N-Channel 75V 75A (Tc) 230W (Tc) Through Hole TO-2...
DataSheet: BUK7509-75A,127 datasheetBUK7509-75A,127 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: TrenchMOS™
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6760pF @ 25V
FET Feature: --
Power Dissipation (Max): 230W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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The BUK7509-75A,127 is a Single Enhancement Mode Power Field Effect Transistor featuring small gate charge and low gate resistance resulting in very fast switching speed. It is a reliable circuit element used in many applications such as level shifting and voltage clamping. This article will explore the properties, application fields and working principle of the transistor.

Properties

The BUK7509-75A,127 is a common source Surface Mounted Device (SMD) transistor. It is designed for use with a supply voltage of between 8 and 20 Volts. It has a drain-source breakdown voltage (BVDSS) of 75 Volts and a drain current (ID) maximum of 30 Amps. Its maximum power dissipation is 1.45 Watts and its total gate charge (Qg) is at 17.3 nC. These properties indicate that the transistor is able to maintain high voltage, carrying power efficiently and switching at fast speeds.

Application Field

The BUK7509-75A,127 is mainly used in level tracing and other similar low-power applications. It is also used as an ON/OFF switch in many high-power, high-voltage circuits, particularly those running on SMD technology. It is capable of carrying large currents and performing at low temperatures without suffering damage. The transistor\'s low gate charge allows it to be used in applications that require fast switching. Some applications in which this transistor is used includes power conversion systems, power supply units, motor drives, LED lighting, and automotive systems.

Working Principle

The BUK7509-75A,127 can be paired with other transistors to create a switching circuit, or it can be used on its own as an open or closed gate switch. In either case, the gate of the transistor is controlled by a signal voltage, either digital or analog. When the signal voltage is sufficiently high, the transistor\'s gate is closed, allowing current to flow from source to drain. Conversely, when the signal voltage is low, the gate is opened, blocking current from flowing from source to drain. This is known as Enhancement Mode, as the transistor can only be switched ON when the signal voltage is increased.

Conclusion

The BUK7509-75A,127 is a single Enhancement Mode Power Field Effect Transistor capable of enabling current to flow with low gate charge and low gate resistance. It is mainly used in low-power applications such as level tracing, and also in many higher-power applications such as power conversion systems and automotive systems. The transistor is switched on or off using a signal voltage, either digital or analog. This signal voltage can either open or close the gate of the transistor, allowing or blocking current from flowing from source to drain.

The specific data is subject to PDF, and the above content is for reference

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