Allicdata Part #: | 568-5721-5-ND |
Manufacturer Part#: |
BUK755R2-40B,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 75A TO220AB |
More Detail: | N-Channel 40V 75A (Tc) 203W (Tc) Through Hole TO-2... |
DataSheet: | BUK755R2-40B,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 5.2 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3789pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 203W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK755R2-40B,127 is a 40V N-channel MOSFET which is designed to be used in high speed switching applications. This device offers high voltage and current capabilities, with a low gate-source capacitance and on resistance of 2.5?. The BUK755R2-40B,127 is a single device, with a gate-drain voltage rating of -20V.
This MOSFET has a range of applications, including high power switching, audio power amplifiers, consumer electronics, general purpose switching and power supply circuits. It is also suitable for use in motor control and automotive applications.
The working principle of this MOSFET is based on the use of a small voltage applied to the gate terminal to control a much larger voltage and current at the drain and source terminals. When the gate voltage is below a certain threshold value, the device is in an ‘off’ state and does not conduct current between the drain and source terminals. When the gate voltage exceeds the threshold, the device is ‘on’ and can conduct current between the drain and source terminals.
The device has a break-down voltage between the drain and source of 40V. This is the maximum voltage that can be applied across the device when it is off. The on-resistance of the device is 2.5?, meaning that when the device is on, there will be a voltage drop of 2.5V between the source and drain.
The capacitance of the device is also important, as this will determine how quickly the device can switch from off to on, and vice versa. The gate-source capacitance of this device is 11pF. This is the amount of charge stored at the gate when a potential difference of 1V is applied between the gate and source terminals.
The BUK755R2-40B,127 is a great choice for applications that require high speed switching, high voltage, and a low on-resistance. It is a single N-channel MOSFET, with a gate-drain voltage rating of -20V and a break-down voltage of 40V. With its low gate-source capacitance and low on-resistance, this MOSFET is well suited to a range of applications, including audio power amplifiers, consumer electronics, general purpose switching and power supply circuits.
The specific data is subject to PDF, and the above content is for reference
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