Allicdata Part #: | 568-9767-5-ND |
Manufacturer Part#: |
BUK7575-55A,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 55V 20.3A TO220AB |
More Detail: | N-Channel 55V 20.3A (Tc) 62W (Tc) Through Hole TO-... |
DataSheet: | BUK7575-55A,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 62W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 483pF @ 25V |
Vgs (Max): | ±20V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 75 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20.3A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The BUK7575-55A,127 is a type of field-effect transistor (FET). As part of the family of single transistors, the FET is a semiconductor device consisting of source, drain and gate terminals. This particular FET is used for power semiconductor applications, such as motor control, switching, power management and lighting. Sometimes referred to as a N-channel Enhancement-mode Power MOSFET, this type of FET operates in two distinct conditions: enhancement and depletion.
In the enhancement condition, an FET acts like an electronic switch, controlling current flow from the source to the drain. In this mode, a voltage is applied to the gate terminal of the transistor, which turns on the switch by inducing a conductive channel between the source and drain regions. This allows for current to flow between the source and drain and carry out the intended circuit function.
In the depletion condition, a FET behaves like a resistor. This occurs when the voltage applied to the gate terminal is reversed, causing a conducting channel to be blocked from forming. This in turn results in a higher ohmic resistance between the source and drain regions, effectively acting like a resistor and limiting the current flow.
The power rating of the BUK7575-55A,127 transistor is 75 Watts and its drain-to-source voltage rating is 75 Volts. The specific application field of this particular FET extends to using it in boost and flyback topologies, such as those used in motor control and switching applications.
The benefit of using a FET as opposed to a bipolar junction transistor (BJT) is that it does not require a continuous current to keep it in the ‘on’ state. This allows for a reduction in both power consumption and heat generation, making it particularly useful for applications where the development of excessive heat could be an issue.
In regards to its use in lighting applications, such as dimmers, the BUK7575-55A,127 FET can also be beneficial in reducing the energy consumption of an application. This is due to a larger portion of the circuit voltage being transferred to the load, compared to a diode or BJT based controllers. Furthermore, FETs also reduce the effects of temperature drift and voltage deviance, improving the stability and reliability of the system.
In conclusion, the BUK7575-55A,127 is a single transistor FET that is capable of both switching and controlling current flow in applications such as motor control and lighting. With features such as low power consumption and low heat generation, as well as improved stability and reliability, the BUK7575-55A,127 is a suitable choice for all types of power semiconductor applications.
The specific data is subject to PDF, and the above content is for reference
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