BUK7604-40A,118 Discrete Semiconductor Products |
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| Allicdata Part #: | 1727-7161-2-ND |
| Manufacturer Part#: |
BUK7604-40A,118 |
| Price: | $ 0.85 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 40V 75A D2PAK |
| More Detail: | N-Channel 40V 75A (Tc) 300W (Tc) Surface Mount D2P... |
| DataSheet: | BUK7604-40A,118 Datasheet/PDF |
| Quantity: | 3200 |
| 800 +: | $ 0.77588 |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5730pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 117nC @ 10V |
| Series: | Automotive, AEC-Q101, TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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?BUK7604-40A is a type of transistor in the category of Field Effect Transistors (FETs). As FETs, it is specifically a type of Metal–oxide–semiconductor Field-Effect Transistor (MOSFET). It is a single MOSFET transistor which is used in many electrical applications. This article will cover the applications, working principle, and construction of BUK7604-40A.
Applications
BUK7604-40A, just like other FETs and MOSFETs, can be used in various applications such as power switches. It can also be used as buffer, switch, or amplifier. Furthermore, because it has good noise and EMI performance, it is a common choice for applications in industrial electronics, audio-visual, and telecommunications.
Working Principle
MOSFETs, including the BUK7604-40A, depend on an applied voltage to induce a current between the source and drain. To begin, the transistor begins in an OFF state. This can be changed by applying an appropriate gate voltage to the gate terminal. When a strong voltage is applied to the gate terminal, an additional electric field forms which causes electrons from the source terminal to be repelled out towards the drain terminal. This creates a very low on-resistance path between source and drain, resulting in a conduction.
In the OFF state, the channel between the source and drain is pinched off. The electric field generated by applying a gate voltage will open up the channel and electrons will flow through between the source and drain, depending on the gate voltage. This gate voltage controls the amount of current that can flow between the source and drain. Thus, this type of MOSFET is classified as a voltage-controlled device.
Construction
BUK7604-40A is typically constructed with a n-channel MOSFET. Inside the transistor, current flows from the source (S), turns at an angle known as the drain-source turn region, and then flows in a reverse direction back to the source. It is important to note that this MOSFET does not allow current to move through the gate, which must provide external biasing to modulate the current flow by altering the electric field of the source-drain junction.
In addition, this type of MOSFET typically contains an insulated gate, or gate oxide, which is used to control the voltage of the gate. This insulated gate is composed of an electrically insulating material, such as silicon dioxide, which is sandwiched between the source and drain and is used to separate the gate from the source and drain. Lastly, the BUK7604-40A also contains a body diode, which is used to prevent any reverse current from flowing when the transistor is in an OFF state.
Conclusion
In conclusion, the BUK7604-40A is a type of MOSFET transistor used in a variety of applications. It works by forming an electric field between the gate and source terminals when a potential is applied to the gate, which opens the channel between the source and drain and permits the current to flow. Furthermore, it consists of various components such as an insulated gate, a source-drain junction, and a body diode to prevent any reverse current from entering the device.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| BUK7E2R3-40E,127 | Nexperia USA... | 1.86 $ | 300 | MOSFET N-CH 40V 120A I2PA... |
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| BUK7Y21-40EX | Nexperia USA... | -- | 1500 | MOSFET N-CH 40V 33A LFPAK... |
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| BUK7907-40ATC,127 | Nexperia USA... | 0.0 $ | 1000 | MOSFET N-CH 40V 75A TO220... |
| BUK7K6R8-40E,115 | Nexperia USA... | 0.46 $ | 1000 | MOSFET 2N-CH 40V 40A LFPA... |
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BUK7604-40A,118 Datasheet/PDF