BUK7635-55A,118 Allicdata Electronics
Allicdata Part #:

1727-7170-2-ND

Manufacturer Part#:

BUK7635-55A,118

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 55V 35A D2PAK
More Detail: N-Channel 55V 35A (Tc) 85W (Tc) Surface Mount D2PA...
DataSheet: BUK7635-55A,118 datasheetBUK7635-55A,118 Datasheet/PDF
Quantity: 4000
800 +: $ 0.30621
Stock 4000Can Ship Immediately
$ 0.34
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 85W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 872pF @ 25V
Vgs (Max): ±20V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 35 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BUK7635-55A,118 is a transistor which belongs to the Transistors - FETs, MOSFETs - Single category. This type of transistor is best used in high power applications, allowing for impressive efficiency and switching capabilities. It is an N-channel enhancement-mode MOSFET, typically used in industrial and telecommunication systems where efficiency, size and speed are important.

When it comes to applications of BUK7635-55A,118 transistors, they are most commonly used in industrial and telecommunication systems, such as in high power switched mode power supplies for high current, high frequency DC-DC converters, high frequency switching stages, radio frequency amplifiers, as well as video broadcast and laser systems. This type of transistor is also utilized in automotive applications, as high current and high temperatures are often encountered in these settings.

When it comes to working principle, this type of transistor works on a process known as electron flow, where electrons are attracted to the positive gate of the transistor in order to become mobile carriers of current. This flow of electrons allows the transistor to provide and maintain a reliable power switch. When a small positive voltage is applied to the transistor’s gate outside the region of inverted substrate - the semiconductor material - it induces a current flow and thus creating a conduction path between the source and the drain.

BUK7635-55A,118 transistors also provide overload protection. In order to maintain the best performance, the overload protection mechanism kicks in when the current passed through the unit exceeds the specified threshold. When such a situation occurs, the overload protection mechanism triggers the shutdown process, which automatically disables the source-drain current path and hence preventing the transistor from running into problems.

Given the performance and variety of applications these transistors can be used in, it is not surprising that BUK7635-55A,118 transistors are used for many applications in the industrial, telecommunication and automotive industries. Being versatile in nature and reliable in performance, these transistors will continue to be used for many other applications in the future.

The specific data is subject to PDF, and the above content is for reference

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