BUK78150-55A/CUF

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	8W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	230pF @ 25V
Vgs (Max):	±20V
Series:	TrenchMOS™
Rds On (Max) @ Id, Vgs:	150 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5.5A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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＜head＞ ＜title＞Transistors - FETs, MOSFETs - Single＞＜/title＞＜/head＞＜body＞ ＜h1＞BUK78150-55A/CUF application field and working principle＜/h1＞ ＜p＞The BUK78150-55A/CUF is a power MOS field effect transistor (also known as an E-Mode MOSFET) that is able to handle a large current and voltage, and it is known for its impressive speed and robustness, so it is frequently used for various applications. With the help of advanced infrared sensing technology, this device can detect an over-current situation and quickly stop the current from flowing. In addition, it also features integrated thermal protection and current limit protection, making it ideal for applications that require advanced safety features.＜/p＞ ＜p＞This power MOSFET has a wide range of possible applications, such as switch-mode power supplies, DC-DC converters, half bridge circuits, automotive applications, and many others. It has been designed with a thermally enhanced IGBT structure, which allows it to achieve very low on-state resistance, while also providing excellent thermal characteristics. This makes it ideal for applications that require the use of high power, while also providing improved efficiency and reduced heat dissipation.＜/p＞ ＜h2＞Working principle＜/h2＞ ＜p＞Like many other power MOSFETs, the BUK78150-55A/CUF works by using a source and a drain terminal, which are connected to each other via a channel. The source is connected to the positive supply and the drain is connected to the negative supply. When a positive voltage is applied to the gate of the MOSFET, it creates an electric field within the channel, which attracts the electrons from the source to the drain and thus allows current to flow. The amount of current that can flow through the device is determined by the voltage applied to the gate, as well as the size of the channel.＜/p＞ ＜h2＞Advantages＜/h2＞ ＜p＞The BUK78150-55A/CUF offers a number of advantages, including improved energy efficiency, fast switching speeds, low operating power, and thermal reliability. The device also has wide input voltage range, which means it is suitable for use in applications that require a wide range of inputs. In addition, the device is also very easy to use, since the user just needs to connect the source and the drain to the positive and negative supply respective.＜/p＞ ＜h2＞Conclusion＜/h2＞ ＜p＞The BUK78150-55A/CUF is a very efficient and reliable power MOSFET that is suitable for a wide range of applications. Its thermally enhanced IGBT structure allows it to achieve higher efficiencies, lower operating power, and improved thermal characteristics. Its impressive speed, robustness, and current limit protection make it ideal for use in applications that require advanced safety features.＜/p＞＜/body＞

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