Allicdata Part #: | 1727-7223-ND |
Manufacturer Part#: |
BUK7907-55ATE,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 55V 75A TO220AB |
More Detail: | N-Channel 55V 75A (Tc) 272W (Tc) Through Hole TO-2... |
DataSheet: | BUK7907-55ATE,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 116nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
FET Feature: | Temperature Sensing Diode |
Power Dissipation (Max): | 272W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-5 |
Package / Case: | TO-220-5 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FETs, or Field Effect Transistors, are commonly used in electronics in applications such as voltage amplification, switching, and timing control. The BUK7907-55ATE is a specific type of FET, known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This type of FET is extremely versatile, and can be used in a variety of applications, from driving motors and powering LEDs to controlling audio and video signals.
A FET is a three-terminal device, consisting of the source, drain and gate electrodes. These electrodes are made of a semiconductor material, such as silicon. When an electrical signal is applied to the gate, a conductive pathway is created between the source and drain, allowing the flow of current from one to the other. This makes FETs excellent switches, as they can be turned on and off with very low power. The BUK7907-55ATE is designed to operate in the drain current range of 5A to 11A, making it suitable for higher-powered applications.
The BUK7907-55ATE has an ultra-high input impedance, meaning that it can control large voltages with little power. This makes it ideal for use in audio and video signal processing, as it can control large signals without introducing noise or distortion. Additionally, its fast switching speed makes it perfect for controlling high speed digital circuits such as CPUs and memory controllers.
The BUK7907-55ATE is designed with a low gate-source capacitance, which makes it ideal for applications that require high switching frequencies. This type of FET is capable of switching at high frequencies, making it suitable for applications such as frequency division and signal modulation. The device also has a low on-state drain-source resistance, which helps to reduce power dissipation, enabling it to be used in power supply circuits.
In addition to its numerous applications, the BUK7907-55ATE is designed to be highly reliable. It has a maximum junction temperature rating of 150℃, making it suitable for use in high temperature environments. It also has protection diodes built into the device, which helps to protect it from electrical spikes or overcurrents.
The BUK7907-55ATE is a highly versatile device, and is capable of performing a wide range of functions. Its low gate-source capacitance, fast switching speed, ultra-high input impedance, and low on-state drain-source resistance make it an ideal choice for applications such as audio and video signal processing, switching and timing control, frequency division, and power supplies. As a highly reliable device, it is capable of operating in a wide range of temperatures and electrical conditions, making it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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