| Allicdata Part #: | 1727-1131-ND |
| Manufacturer Part#: |
BUK7E1R9-40E,127 |
| Price: | $ 2.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 40V 120A I2PAK |
| More Detail: | N-Channel 40V 120A (Tc) 324W (Tc) Through Hole I2P... |
| DataSheet: | BUK7E1R9-40E,127 Datasheet/PDF |
| Quantity: | 3500 |
| 1 +: | $ 1.86480 |
| 50 +: | $ 1.50608 |
| 100 +: | $ 1.35545 |
| 500 +: | $ 1.05424 |
| 1000 +: | $ 0.87352 |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | I2PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 324W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 9700pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 118nC @ 10V |
| Series: | Automotive, AEC-Q101, TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 1.9 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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BUK7E1R9-40E,127 is a member of the family of single field-effect transistors (FETs). This type of transistor is a voltage-controlled, three-terminal device that is used to amplify and regulate current signals. It is usually used as a switch and is often used in digital logic circuits such as logic gates and digital-to-analog and analog-to-digital converters.
A single FET has two terminals, the source and drain. The third terminal, the gate, is used to control the current that flows between the source and the drain. Depending on the type of FET, the gate may be a p-type or n-type material. When a voltage is applied to the gate, it creates an electric field that attracts free electrons to the area between the source and drain, thus allowing current to flow. The amount of current that flows is dependent on the voltage applied to the gate.
The BUK7E1R9-40E,127 is a type of single FET, specifically a metal-oxide-semiconductor FET (MOSFET). It is used in a variety of applications, such as amplifying an analog signal, controlling motor speeds and power, light dimming, voltage regulators, and audio amplifiers. The BUK7E1R9-40E,127 has a low drain-source resistance, allowing for more efficient power conversion and greater bandwidth than other FETs.
The working principle of the BUK7E1R9-40E,127 is similar to other types of FETs. When voltage is applied to the gate, the electric field creates a channel between the source and drain. This channel can then act as a “gate” to control the flow of current. If the voltage applied to the gate is high enough, the channel will be wide enough to allow a large amount of current to flow. Conversely, if the voltage is too low, the channel will be too narrow to allow much current to pass.
The BUK7E1R9-40E,127 is particularly useful in applications where a large amount of power is required. It is designed to handle high currents and can withstand high temperatures. The low drain-source resistance also makes it ideal for certain applications, such as auto-zero circuits, where steady-state current is required.
The BUK7E1R9-40E,127 is a versatile FET that can be used in many different applications. It is capable of handling large amounts of power and can be used in a variety of circuits. It is essential for engineers who are designing and developing circuits for digital and analog applications.
The specific data is subject to PDF, and the above content is for reference
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|---|
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BUK7E1R9-40E,127 Datasheet/PDF