Allicdata Part #: | 1727-1106-2-ND |
Manufacturer Part#: |
BUK7Y12-40EX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 52A LFPAK |
More Detail: | N-Channel 40V 52A (Tc) 65W (Tc) Surface Mount LFPA... |
DataSheet: | BUK7Y12-40EX Datasheet/PDF |
Quantity: | 10500 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1039pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 52A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BUK7Y12-40EX is a p-channel, depletion power MOSFET and is mainly used for power management applications. It has a short gate to drain delay, low threshold voltage and a low on-resistance making it suitable for high-performance applications.
The BUK7Y12-40EX is a depletion-mode MOSFET, also known as mode-of-operation MOSFET. It operates by allowing positive charges to flow from the drain, to the source and then back to the drain when the gate voltage is less than the threshold voltage. When the gate voltage is reversed, the depletion region is increased and the drain source current is blocked, turning the MOSFET off.
The primary application of the BUK7Y12-40EX includes step-up converters and DC-DC converters. In step-up converters,MOSFETs are used to amplify the signal from the primary power stage to a higher voltage. As for DC-DC converters, MOSFETs act as switches, allowing voltage to flow or block voltage from flowing depending on the gate voltage.
The working principle of BUK7Y12-40EX is based on the physics of how MOSFETs work. It is based on a semiconductor material, usually silicon or germanium, doped with electricity to form P and N diodes. The diodes are then separated by an insulator, usually silicon dioxide or magnesium oxide. The conductance of this insulator can be controlled by applying a voltage to the input terminals, which causes the electrons in the material to move around and form a conductive channel between the diodes. When the voltage applied to the gate is sufficient, the conductivity of the insulator increases, allowing current to flow through the channel from the drain to the source.
The BUK7Y12-40EX has an on-resistance of 0.16 ohms and is capable of handling up to 3A continuous drain current at 25 degrees Celsius. It is also rated for operating temperatures from -55 to 150 degrees Celsius and can be used in a variety of power management applications. It is very versatile, allowing the user to adjust the gate voltage according to the requirements of the application. This makes it very suitable for use in high-performance applications.
In conclusion, the BUK7Y12-40EX is a p-channel, depletion power MOSFET. Its primary applications include step-up converters and DC-DC converters. It has an on-resistance of 0.16 ohms, is rated for operation at temperatures from -55 to 150 degrees Celsius, and can handle up to 3A continuous drain current at 25 degrees Celsius. It is ideal for use in power management applications and is very suitable for use in high-performance applications.
The specific data is subject to PDF, and the above content is for reference
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