BUK7Y15-100EX Allicdata Electronics

BUK7Y15-100EX Discrete Semiconductor Products

Allicdata Part #:

1727-1484-2-ND

Manufacturer Part#:

BUK7Y15-100EX

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 100V 68A LFPAK
More Detail: N-Channel 100V 68A (Tc) 195W (Tc) Surface Mount LF...
DataSheet: BUK7Y15-100EX datasheetBUK7Y15-100EX Datasheet/PDF
Quantity: 1000
1500 +: $ 0.36395
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 195W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3958pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 54.5nC @ 10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BUK7Y15-100EX is an N-Channel enhancement-mode field-effect transistor (FET) which is typically used for power supply applications. It is designed to provide high power and low on-state resistance in a small footprint with minimized gate-to-drain diode reverse recovery time. This FET is especially suitable for power management and synchronous rectification applications in green laptops, net books and other portable devices.

The BUK7Y15-100EX features a high current density and low RDS(on) which enables high efficiency application. It also has a fast switching speed and a low gate charge QGS which makes it ideal for synchronous rectification applications. Additionally, the BUK7Y15-100EX has a best-in-class package outline which gives the user an optimized solution for space-restricted applications.

The main working principle of the BUK7Y15-100EX is to act as an electrically controlled current regulator. This FET works by controlling the drain-source channel, which acts as a reliable pass for current when the gate-source voltage is applied. The higher the applied gate-source voltage, the higher the channel resistance as electrons are repelled from the channel and thus resulting in a reduction of current flow. When the gate-source voltage is reduced, the drain-source channel resistance is reduced, and the current flow through the channel increases.

Moreover, the BUK7Y15-100EX features low reverse recovery time (trr) which makes it ideal for high efficiency applications. The low reverse recovery time ensures that the channel remains highly efficient and the device does not suffer from losses due to increasing channel resistance. The device also has a low gate-drain charge (QGD) which reduces the total power dissipation of the device and thus reducing the thermal footprint.

The BUK7Y15-100EX is available in a SOD123F package which reduces the size of the FET making it suitable for space-restricted applications. The device can be used for a wide range of application areas such as load switching, motors, solenoids, solid state relays, power control circuits and other automotive related applications.

In addition, this FET is highly reliable and suitable for applications under harsh environmental conditions such as automotive, medical, home appliances and industrial applications. It is also designed to withstand harsh operating conditions and is capable of withstanding operating temperature up to 150°C.

The BUK7Y15-100EX is an efficient, reliable and cost-effective N-Channel FET which is suitable for a wide range of power management applications. Its low on state resistance and fast switching speed makes it ideal for synchronous rectification applications and its SOD123F package provides an optimized solution for space-restricted applications. Thanks to its high current ratings and low RDS(on), the BUK7Y15-100EX can be used for load switching, solenoids and motors.The specific data is subject to PDF, and the above content is for reference

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