BUK7Y41-80EX

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The BUK7Y41-80EX is a high-performance field effect transistor (FET). It is produced by Infineon Technologies and is included in their OptiMOSTM M series. The BUK7Y41-80EX is a dual N-channel enhancement mode power Field Effect Transistor (FET) which is constructed with two N-Channel MOSFETs in a plastic envelope.

Unlike BJTs, MOSFETs are voltage driven so a positive signal applied to the gate biases the entire semiconductor junction, regardless of the drain and source voltage. In contrast, BJTs require both a bias voltage and a signal. The gate voltage is responsible for controlling the channel conduction between the drain and source terminals. This lets FETs act as voltage-controlled resistors rather than current-carrying devices.

This is why FETs are much more suitable for AC applications than BJTs. The BUK7Y41-80EX supports a drain-source voltage up to 80V and a drain-source current of 60A. Its maximum operating temperature is 150°C and the maximum junction temperature is 175°C. On-resistance is low and the FET operates in a steady state at up to 1.5MHz.

This power FET makes the ideal switch for higher frequency switching or for driving inductive loads, such as DC motors, solenoids and relays. The BUK7Y41-80EX makes an excellent choice for applications such as switching, DC-DC converter, motor control and Brushed DC motor drivers. The BUK7Y41-80EX is also suitable for lighting and motor control applications, providing excellent thermal performance when used in switch-mode power supplies.

Thanks to its low on-state resistance, the BUK7Y41-80EX can be used as a switch in many power circuits. This power FET is also capable of handling very high currents, allowing it to be used in applications such as high-power DC-DC converters. This FET has excellent thermal properties, allowing it to handle higher power densities than other devices.

In addition, the BUK7Y41-80EX includes integrated Schottky protection diodes that provide reverse blocking capability, protecting the FET from short circuit current flows. It also features integrated body diodes for reversed biasing, limiting the maximum VDS blocking voltage and preventing any reverse current flow.

The BUK7Y41-80EX is designed to provide low on-state resistance without suffering from any high switching losses. This makes it the ideal choice for applications needed in both medium and high-power applications. Its excellent thermal performance also makes it ideal for achieving improved power handling and efficiency in medium to high-power applications.

In conclusion, the BUK7Y41-80EX is a very good option for a wide range of electronic design applications. Its extremely low on-state resistance and integrated Schottky protection diodes make it suitable for handling very high currents. Its thermal performance makes it ideal for applications requiring high power handling and excellent efficiency.

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