BUK7Y6R0-60EX Discrete Semiconductor Products

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The BUK7Y6R0-60EX is a single N-channel Enhancement Mode Field-Effect Transistor (MOSFET). This transistor is designed for high speed switching and power management applications. This part is specially designed to operate at frequencies up to 2 GHz. The BUK7Y6R0-60EX is a low-voltage, low-gate charge MOSFET. It is ideal for numerous power management and switching tasks in modern electronic gadgets, ranging from switching power supplies to Notebook PCs.

Advantages

• The BUK7Y6R0-60EX has versatile applications.
• It is extremely compact which makes it easy to fit in even the most compact of devices.
• The BUK7Y6R0-60EX is capable of operation at frequencies up to 2 GHz.
• It has low-power consumption, which is beneficial in battery powered devices.
• The Mosfet comes with low gate charge, allowing the user to switch it at a lower voltage.

Applications

• The BUK7Y6R0-60EX is very suitable in switching power supplies, automotive electronics, motor control, and high-speed switching applications.
• It can be used in notebooks, cell phones, digital cameras, consumer electronics, LCD TVs, AC-DC adapters and other battery powered devices.
• The BUK7Y6R0-60EX can be used for high-frequency applications including radar systems, telecommunications and broadband communication.
• It is suitable for audio/video switching and power management as well.

Working Principle

The BUK7Y6R0-60EX MOSFET operates on the principle of a field-effect transistor (FET). A FET is a type of transistor which is used to control the flow of electric current in a circuit. The transistor consists of three terminals- the gate, drain and source. When a voltage is applied to a FET’s gate terminal, it either attracts or repels electrons in the region between the source and the drain. This produces a channel of electrons that can be controlled by varying the input voltage. The rate at which electrons are attracted or repelled depends on the size of the applied voltage.

In the case of the BUK7Y6R0-60EX, it is an N-channel type of MOSFET which means that when a positive voltage is applied to the gate terminal, it will attract electrons from the source toward the drain. Conversely, when a negative voltage is applied to the gate terminal, it will repel electrons away from the source, towards the drain. This combination of attraction and repulsion can be used to control the flow of electrons through the circuit.

Conclusion

The BUK7Y6R0-60EX is a single N-channel Enhancement Mode Field-Effect Transistor (MOSFET) that is designed for high-speed switching and power management applications. It is ideal for numerous power management applications in modern gadgets. It is capable of operating at frequencies up to 2 GHz and has low-gate charge, allowing the user to switch it at a lower voltage. It is suitable for switching power supplies, automotive electronics, motor control, and high-speed switching applications. It is based on the FET working principle whereby a field-effect transistor is used to control the flow of electric current in a circuit by attracting and repelling electrons when a voltage is applied to the gate terminal.

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