BUK9506-55B,127 Allicdata Electronics
Allicdata Part #:

568-6631-5-ND

Manufacturer Part#:

BUK9506-55B,127

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 55V 75A TO220AB
More Detail: N-Channel 55V 75A (Tc) 258W (Tc) Through Hole TO-2...
DataSheet: BUK9506-55B,127 datasheetBUK9506-55B,127 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 258W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7565pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The BUK9506-55B,127 is a transistor, specifically a type of field-effect transistor (FET). To explain why this device is classified as such, it’s necessary to firstly understand the underlying technology of FETs and the differences between them and other types of transistors.FETs, including the BUK9506-55B,127, are controlled by electric fields which act on their terminals and allow them to control current in much the same way that a basic transistor does. The difference between these and other types of transistors is that FETs’ gate terminal directly change the current between the two other terminals, whereas transistors rely on an external current to switch on or off a connection.Though transistors are usually equipped with three terminals, FETs can actually come in several different forms. For example, there are MOSFETs or metal-oxide-semiconductor FETs – like the BUK9506-55B,127 – which are some of the most commonly used FETs, and which are covered by a gate oxide layer. This layer performs a crucial role; when it’s activated, it adjusts the current through the FET and can be used in a variety of ways with discrete products and integrated circuits.The application of the BUK9506-55B,127 specifically is as a single MOSFET device, which means it contains just one FET surrounded by other components such as a heat sink. Its specific purpose is in power circuits; specifically, it’s used to control and manage the switch-on and switch-off of the power supply to a device.The working principle of the device is relatively simple. Whenever the terminal requires current, the gate oxide layer is activated, allowing the current to flow from the source to the drain of the FET. This action is then used to switch the device’s power supply off or on as required.It’s this simplicity as well as its ability to control power supplies that makes the BUK9506-55B,127 such a useful component. Not only does it allow for simple switching mechanisms that do not require complex external circuitry, but it’s also relatively low-cost, making it perfect for those who want to take advantage of transistor technology without the hefty price tag usually associated with it.In conclusion, while the exact use and working of the BUK9506-55B,127 may be unfamiliar to some, it’s easy to see why it’s become so popular in the world of transistor technology. Making use of a gate oxide layer, it’s easily capable of switching the power supplies of devices in both simple and complex circuits, and its low cost makes it a great choice for those who want to make use of FET technology without breaking the bank.

The specific data is subject to PDF, and the above content is for reference

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