BUK9875-100A,115

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BUK9875-100A is a high-speed, low-noise, low-capacitance, N-channel enhancement mode field effect transistor (FET). This type of FETs is particularly suitable for high-frequency switch loads in medium power applications.

Application Field

The BUK9875-100A FET is designed to operate in high-frequency applications, such as deflection circuits in television sets, CRT over-voltage protection circuits, and switching regulation of transistor power supplies. It can also be used in low-noise amplifier circuits and low-distortion pulse waveform generation circuits.

This type of FET can also be used in RF circuits such as wideband amplifiers, audio amplifiers, as well as audio-frequency oscillators, modulators and switching circuits. It is well-suited for linear and digital logic applications, as well as for high-frequency, high-speed circuits.

Working Principle

In order to understand how the BUK9875-100A FET works, one must first understand the basic principles of the p-type and n-type of semiconductors. This type of FET is made of two types of semiconductors — a p-type semiconductor surrounded by an n-type semiconductor. The p-type semiconductor is made up of a very small number of negatively charged free electrons (free holes) as well as an overall positive charge. The n-type semiconductor has a large number of positively charged free electrons and an overall negative charge.

When the gate of the FET is connected to a positive voltage, the positive voltage attracts the negatively charged free electrons in the p-type semiconductor. This attracts the positively charged free electrons in the n-type semiconductor and they also flow towards the gate of the FET. When the gate voltage is increased, more electrons flow through the p-type and n-type semiconductors until the FET is saturated.

When the FET is saturated, a strong electric current will flow from the source to the drain. This is because the large electric field created by the positive gate voltage attracts more electrons from the source, and these electrons are allowed to pass through the FET to the drain. This process is known as channel formation.

When the voltage applied to the gate of the FET is reduced, the free electrons in the p-type and n-type semiconductors are no longer attracted to the gate and the FET will be turned off, stopping the flow of current from the source to the drain.

The BUK9875-100A FET is designed to have a very low electric capacitance, making them ideal for high-speed and low-noise applications. As well, these FETs are designed with an ultra-wide bandwidth to minimize signal distortion.

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