BUK9880-55A,115

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The BUK9880-55A is a high-voltage N-channel MOSFET transistor, a type of field-effect transistor (FET) with a better and more advanced chip architecture. The BUK9880-55A is a device featuring a wide range of both dynamic and static characteristics. It is specially designed to have fast switching capabilities and low capacitance. This transistor is made in a TO-247 Plastic package package, giving the device an increased power density and a better electrical performance.

Application Field

The BUK9880-55A MOSFET is generally used as a switch in high voltage and/or high power applications. Typical applications of this transistor could be found in converters, motor drives, power converters, and dc/ac power supplies. The high voltage capability of the transistor makes it suitable for use in high voltage circuits, from 600V to 650V, with a drain current ranging from 7.5A to 10A.

Working Principle

The BUK9880-55A MOSFET is based on a depleted field-effect transistor architecture, meaning that the current flowing from the drain to the source is controlled by a voltage applied to the gate product of the transistors. The control voltage affects a metallic oxide layer, which prevents an electron flow from the source to the drain. This layer acts as a resistive barrier between the drain and the source, and the current is controlled by the amount of voltage applied to the gate.

In this way, the BUK9880-55A is a voltage-controlled device, in which the voltage applied to the gate determines the conductance of the device. The voltage applied to the gate also modifies the switching time of the transistor, thus allowing it to have very fast switching capabilities.

The BUK9880-55A is also a low capacitance MOSFET, meaning that it has a low input capacitance and it can rapidly switch between on and off states without the risk of current leakage. The low capacitance of the transistor enables the device to switch faster and more efficiently, thus allowing for higher power densities.

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